简介:GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb(Te-doped)substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.
简介:LayeredcathodematerialLiCo1/3Ni1/3Mn1/3O2wassynthesizedbyPechiniprocess,andinvestigatedusingX-raydiffraction(XRD),scanningelectronmicroscopy(SEM)andgalvanostaticcharge/dischargecycling.Thesampleiswell-crystallizedandhasaphase-purea-NaFeO2structure.Theparticlesizesareuniform,anddistributedintherangeof20-200nm.TheinitialdischargecapacityoftheLi/LiCo1/3Ni1/3Mn1/3O2cellwasabout149mAh·g-1whenitwascycledatavoltagerangeof4.5-2.3Vwithaspecificcurrentof0.25mA.Theresultisbetterincomparisonwithsolid-statesolutionmethod.Thesyntheticprocedurewasdiscussed.Threemajorreactions:chelation,esterification,andpolymerizationsuccessivelyoccurred.