简介：大规模轧了nanowires被ammoniatingGa2O3电影成功地在在850点在Si(111)底层上扔的Nb层上综合。X光检查衍射(XRD)，扫描电子显微镜学(SEM)，field-emssion传播电子显微镜(FETEM)，Fourier转变了红外线的光谱(FTIR)被用来描绘结构、词法的性质同样综合轧了nanowires。结果表明nanowires是纯的六角形与在50nm和100nm之间的一段大约几微米和一条直径轧了wurtzite结构。最后，简短讨论了是镓氮化物nanowires的形成机制。

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简介：Poroussiliconpreparedbypulseelectro-etchingisheat-treatedinO2atmospherewithanenhancementofitsPLpeakandanimprovementofitsPLstability.ThePLpeakofasampleporoussilicontreatedinO2atmosphereat1000℃presentsitselfathree-peakstructureand,comparedwithanun-heat-treatedsample,thereexistsblueshiftof～40nm.

简介：调查在上植入Ge在氨下面轧了由MOCVD成年然后在1100点退火的电影周围被执行了。与增加Ge培植剂量，四座另外的山峰在260的波浪数字产生，314，428并且在Ramam系列的670cm-1。在PL系列，与在2.66eV和黄乐队集中的PL乐队相比的乐队边排放的相对紧张随植入Ge的剂量的增加减少。260的模式和314cm-1被归因于散布的激活混乱的拉曼，而428的模式和670cm-1被分到空缺和空缺相关的建筑群的本地颤动。在2.66eV和黄乐队集中的PL乐队也与这些空缺缺点有关。在为样品的301cm-1的新拉曼山峰退火了仅仅5min由于缺乏的退火从Ge簇发源。

简介：SpectralandstructuralcharacteristicsofdistributedBraggreflector(DBR)invertical-cavitysurface-emittinglaserswerestudiedwithphotoluminescenceanddouble-crystalX-raydiffractionmeasurement.TheexpectedhighqualityepitaxialDBRstructurewasverified.IntheX-raydouble-crystalrockingcurvesofDBRthezeroth-orderpeak,thefirstandsecondordersatellitepeaksweremeasured.Splittingofdiffractionpeakappearedintherockingcurveswasanalyzed.Theeffectsofintroduceddeepenergylevelsonthestructuralperfectionandopticalpropertieswerediscussed.

简介：在这份报纸，我们表明graphene氧化物的变换(去)进硼碳oxynitride(BCNO)经由反应与的混合nanosheets硼酸酸和脲，硼和氮原子在期间被合并到graphenenanosheets。试验性的结果揭示那去为光致发光(PL)是重要的BCNO黄磷粒子。在这个系统，更重要地，准备BCNO黄磷能被用来准备为射出二极管(LEDs)的红光需要的材料。

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简介：Probingtheopticalpropertiesofmolybdenumdisulfide（MoS2）isvitaltoitsapplicationinplasmon-enhancedspectroscopy,catalysts,sensing,andoptoelectronicdevices.Inthispaper,wetheoreticallystudiedtheRamanandfluorescencepropertiesofmonolayerMoS2usingtip-enhancedspectroscopy（TES）.Inthestrong-couplingTESsystem,theRamanandfluorescenceenhancementfactorscanbeturnedtoashighas4.5×108and3.3×103,respectively,byoptimizingthetip–MoS2-filmdistance.OurtheoreticalresultsnotonlyhelptodeeplyunderstandtheTESpropertiesofmonolayerMoS2,butalsoprovidebetterguidanceontheapplicationsofthenoveltwo-dimensionalmaterial.

简介：Photoluminescenceevaluationofpandntype6H-SiCsampleshasbeendone.Resultsshowthatatlowtemperaturethephotoluminescenceof6H-SiCisclearlydominatedbydonor-acceptorpairtransitions,insomecase,free-to-donortransitioncouldbeobservedathighertemperature.Thethermalquenchingprocessesofthephotoluminescencehavebeeninvestigatedtodeterminethepossibleionizationnenergiesoftheimpurities.

简介：高密度的CdS空nanospheres被一种简单化学蒸汽免职技术成功地综合。水晶结构，组合信息，和词法结构被X光检查衍射(XRD)描绘，扫描电子显微镜学(SEM)，传播电子显微镜学(TEM)，和精力散的X光检查分光计(EDX)。结果证明同样准备的CdS空nanospheres让制服缩放大约1在直径的3m。Kirkendall现象为CdSnanostructures的形成被建议。在580nm定位的强壮的排出物被观察。

简介：Temperature-dependenceandexcitation-intensity-dependenceofphotoluminescencespectraforbothdisorderedandorderedGa0.52In0.48Paremeasured.Thedisorderedsampleischaractierizedbyitssinglepcakphotoluminescencespectrumwhichisexcitation-intensity.independentandhasdifferentactivationenergyatdifferenttemperatureregion.Theorderedsampleshowsdoublepeaks,theintensityofthehigh-energypeakhasananomalousincreasefirstlyandquenchesafterwards.Therelativehenomenaarereasonablyexplainedintermsoflatticeorderingandorientationsuperlatticemodel.

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简介：Self-organizedIn0.5Ga0.5As/GaAsquantumislandstructureemittingat1.35μmatroomtemperaturehasbeensuccessfullyfabricatedbymolecularbeamepitaxy(MBE)viacycled(InAs)1/(GaAs)1monolayerdepositionmethod.Photoluminescence(PL)measurementshowsthatverynarrowPLlinewidthof19.2meVat300Khasbeenreachedforthefirsttime,indicatingeffectivesuppressionofinhomogeneousbroadeningofopticalemissionfromtheIn0.5Ga0.5Asislandsstructure.Ourresultsprovideimportantinformationforoptimizingtheepitaxialstructuresof1.3μmwavelengthquantumdot(QD)devices.

简介：ZnO/diamond-like碳(DLC)薄电影被搏动的激光免职(PLD)在Si(111)上扔晶片。可见房间温度光致发光(PL)被荧光分光光度计从ZnO/DLC薄电影观察。PL系列的Gaussian曲线试穿表明可见排放包含的宽带有=508nm，554nm和698nm的三个部件。起源和可见PL的可能的机制被讨论，并且他们能被归因于ZnO和DLC薄电影的PL再结合。

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简介：Organicmultiplequantumwell(OMQW)structuresconsistingofalternatinglayersoftris(8-quinolinolato)aluminum(Ⅲ）（Alq3)an2-(4-biphenylyl)-5-(4-ter-butylphenyl)-(1,3,3-oxadiazole)(PBD)havebeenfabricatedbyorganicmolecularbeamdeposition(OMBD).Theindividuallayerthicknessinthemultilayersampleswasvariedfrom6nmtp20nm.ThemultiplequantumwellstructuresweredeterminedbylowangleX-raydiffraction,opticalabsorptionandphotoluminescence(PL).ThePLspectranarrowandtheemissionenergyhasbeenobservedtoshifttohigherenergycomparedwiththatinthemonolayerstructure,suggestingaquantumsizeeffect.

简介：TheinvestigationonopticalpropertiesofSi1-xGex/Sistrainedlayerstructureshasbeencarriedoutactivelyinrecentyears.Thephotoluminescencehasbe-comeabriskersubjectinthestudiesofitsvariousopticalproperties.Aresearchdevelop-menttophotoluminescencepropertiesofsomenewSi1-xGex/Sistrainedlayerstruc-turesisintroduced.

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