GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb（Te-doped）substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.
