简介:WehavedepositedW/Simultilayermirrorsusingthemagnetronsputteringunderthelowsputteringpressureandthehighmagneticfieldstrength,andmeasuredtheirreflectivtityinBeijingsynchrotronradiationfaciltiy,W/Simultilayershowthepeakreflectivityofapproximately10%ataphotonenergyof1200eVand10.5%ataphotoenergyof700eVrespectivelyattheincidenceangleof81°。
简介:Thea-Si∶H/SiNx∶HsampleseriesareinvestigatedbymeansofRamanscatteringtechnique(RST).Theresultshowsthatduetothestructuralmismatchbetweena-Si∶Handa-SiNx∶H,severeinduceddistortionsareproducedintheinterfaceoftheheterojunction,andtheseinduceddistortionstendtowardsacertainenergystate.Theorderingoftheinterfacestructuredependsontheperiodicnumberofmultilayerthinfilms.
简介:AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.
简介:我们揭示并且解释thermopowerS/T的可伸缩的行为展出了由典型重费米子(HF)金属YbRh2在在温度T的磁场B的申请下面的Si2。我们证明一样的可伸缩被不同HF混合物例如表明?-YbAlB4和强烈相关的分层的钴氧化物[BiBa0.66K0.36O2]CoO2。用YbRh2是的Si2一个例子,,我们证明S/T的可伸缩的行为在antiferromagnetic阶段转变被违背剩余抵抗力0和状态的密度,N,经验在阶段转变跳,引起thermopower做二跳并且改变它的符号。我们的说明基于深刻地影响0和N的单个粒子的光谱变平。描绘S/T行为的主要特征,我们构造TBYbRh2Si2。我们为HF混合物的计算S/T在对试验性的事实的好同意并且支持我们的观察。
简介:HydrogenabsorptionsofLaFe11.5Si1.5compoundin1-atmhydrogengasatdifferenttemperaturesareinvestigated.Thehydrogencontentinthehydrogenatedsampledoesnotincreasewiththeincreaseoftemperatureofhydrogenabsorptionbutchangescomplicatedly.Thecharacteristicoffirst-ordertransitioninLaFe11.5Si1.5compoundisweakenedafterhydrogenabsorption.Itleadsthepeaksofmagneticentropytobecomewiderandthehysteresislosstoreducesignificantly,butrelativecoolingpower(RCP)isnotchangedconsiderably.
简介:Cupricoxide(CuO)isconsideredtobeapromisingmaterialforphotovoltaicapplications.Inthispaper,p-CuO/n-Sijunctionsolarcellswereobtainedbythermaloxidationofmetalliccopperfilmsdepositedonn-Sisubstratesat400℃for5h.X-raydiffractionpatternsshowthattheas-preparedfilmsareCuOwithmonocliniccrystallinestructure.HalleffectmeasurementresultsshowthatCuOfilmsarep-typeconduction.Adirectband-gapof~1.57eVfortheCuOfilmisdeducedfromUV-VisAbsorbancespectra.SolarcellsofCu/p-CuO/n-Si/AlstructureshowthatitsphotovoltaicbehaviorhasamuchwiderspectrumresponsewidthcomparedwiththatofSisolarcells.Inaddition,thephotocurrentofCuO/n-SijunctionisinvestigatedasafunctionofCuOfilmthickness,anditisfoundthatthecriticalthicknessforCuOonSiisabout250nm.
简介:TostudytheadsorptionbehaviorofCu+inaqueoussolutiononsemiconductorsurface,theinteractionsofCu+andhydratedCu+cationswiththecleanSi(111)surfacewereinvestigatedviahybriddensityfunctionaltheory(B3LYP)andMller-Plessetsecond-orderperturbation(MP2)method.ThecleanSi(111)surfacewasdescribedwithclustermodels(Si14H17,Si16H20andSi22H21)andafour-siliconlayerslabunderperiodicboundaryconditions.CalculationresultsindicatethatthebondingnatureofadsorptionofCu+onSisurfacecanbeviewedaspartialcova-lentaswellasionicbonding.ThebindingenergiesbetweenhydratedCu+cationsandSi(111)surfacearelarge,suggestingastronginteractionbetweenthem.ThecoordinationnumberofCu+(H2O)nonSi(111)surfacewasfoundtobe4.Asthenumberofwatermoleculesislargerthan5,watermoleculesformahydrogenbondnetwork.Inaqueoussolution,Cu+cationswillsafelyattachtothecleanSi(111)surface.
简介:由微观结构和机械性质上的艾尔的Si的部分或完整的替换的效果是广泛地与多角形的铁酸盐矩阵在多相的导致转变的粘性(旅行)学习了钢,但是很少在bainitic旅行钢学习了。当为第三代的进程参数的一个函数预付高力量钢(AHSS),现在的学习的目的是适当地在bainitic钢在bainite转变,微观结构和机械性质上调查艾尔和Si的效果以便为alloying设计提供指南。而Si增加在bainite转变动力学导致延迟,它从dilatometry学习,微结构调查和艾尔增加导致加速的张力的性质大小被显示出。艾尔的增加延迟进在使温度保持比450高的珠泽铁和碳化物的奥氏体的分解?敲牣獹慴汬穩瑡潩?湡敮污湩?慷?灡汰敩?潴愠???┶楓猠整汥琠?浩牰癯?桴?慭湧瑥捩瀠潲数瑲敩?吠敨椠灭捡?景愠?慣瑳猠牴灩瀠敲愭湮慥楬杮漠?桴?業牣獯牴'壮肭?整瑸牵?瀠敲楣楰慴楴湯愠摮洠条敮楴?牰灯牥楴獥眠牥?湩敶瑳杩瑡摥戠?汥'虪箿珵u潲敢洠捩潲愭慮祬楳?琠慲獮業獳潩?汥'虪箿珱^驿麙盏?愠摮堠爭祡搠晩牦捡楴湯愠慮祬楳?攠'?瑉眠獡映畯摮琠慨?桴?牰'虨宫摤嫕?景猠'虦?桰獡?慰瑲捩敬?...
简介:通过EMS(Ethylmethylsulfonate,甲基磺酸乙酯)诱变豫谷1号获得一个遗传稳定的谷子小穗突变体si-sp1,该突变体突出表现为穗部变小,同时伴随有株高降低、单码小花数减少和根系变小等表现型变异。与野生型豫谷1号相比,突变体的穗长和株高分别降低了37.8%和9.0%,单穗粒重和单码小花数分别降低了40.3%和31.7%,但千粒重增加了20.2%。遗传分析表明,si-sp1突变性状由1对隐性基因控制。以si-sp1为母本、辽谷1号为父本构建的F2定位群体的隐性单株,将突变基因定位在8号染色体上CAAS8003与SSR1038间约11.02M的距离内,为下一步精细定位并分离该基因奠定了基础。
简介:TheeffectoftheadmixturesofAlandSimetalsandB4CandMgAlONcompoundsontheoxidationofMgO/Si3N4compositerefractoryhasbeenstudied,whichisapromisingcarbonfreerefractoryforsteel-makingapplicatlon.Thefourkindsofadmixturescanbeusedasanti-oxidantsforSi3N4,butthemixtureofAlandSiachievedthebestresult.Themixturecannotonlyplaytheroleasantioxidant,butalsoassistthesinteringprocessandhelpformdensesinteringlayer,improvingthepropertyofthecomposite.
简介:ThedetailedkineticsofFischer-TropschsynthesisoveranindustrialFe/Cu/La/Sicatalystwasstudiedinacontinuousspinningbasketreactorundertheconditionsrelevanttoindustrialoperations.ReactionrateequationswerederivedonthebasisofLangmuir-HinshelwoodHougen-WatsontypemodelsforFischer-Tropschsynthesisbasedonpossiblereactionssetsoriginatedfromthecarbide,enolicandcombinedenol/carbidemechanisms.Kineticmodelcandidateswereevaluatedbytheglobaloptimizationofkineticparameters,whichwererealizedbyfirstminimizationofmulti-responseobjectivefunctionswithconventionalLevenberg-Marquardtmethod.Itwasfoundthatanenolicmechanismbasedmodelcouldproduceagoodfitoftheexperimentaldata.Theactivationenergyforparaffinformationis95kJmol-1whichissmallerthanthatforolefinformation(121kJmol-1).
简介:摘要:本文研究了Nb对0.4%Si无取向硅钢电磁性能的影响及分析了Nb对微观组织、织构及夹杂物的变化规律。结果表明,在工业化生产中,当Nb含量从3ppm增加到20ppm时,夹杂物数量由7.08X106个/mm2增加到8.63X108个/mm2,这些尺寸细小的Nb夹杂物和MnS、AlN等夹杂物大量富集钉扎在晶界处,晶粒无法正常长大,导致白片晶粒组织出现非常明显的细晶偏聚现象,消除应力退火后,晶粒组织则发生了明显的局部晶粒异常长大和较多的细晶现象,晶粒组织更加不均匀,从而导致铁损劣化。另外,Nb含量高带来较多细小含Nb夹杂物,抑制了粗大、发达热轧组织的形成,导致有利织构旋转立方织构{100}<011>减弱,不利织构{111}和{111}增强,最终导致磁感强度降低。
简介:摘要目的探讨应用预装式推注器进行人工晶体(intraocularlens,IOL)植入手术的临床效果。方法超声乳化白内障吸净后,试验组76例采用预装式推注器植入ks-3(canon-staar公司),对照组67例采用传统推注器植入SN60ATIOL(ALCON公司)分别在术前,术后第1天,术后第7天,第1,第3,第6,第12个月时进行详细眼科检查,记录术中,术后并发症,结果所有患者均成功施行手术,术后各阶段视力均比术前提高(P均0.05),术中IOL破损,改变植入方法IOL翻转,IOL光学面夹痕,IOL光学面折痕,IOL襻弹出囊袋口发生率试验组分别为1.3%,2.2%,0%,0%,0%,对照组分别为0%,0%,1.5%,15.2%,9.5%,2.7%,未见其他术后并发症。结论应用预装式推注器和传统式推注器进行人工晶体植入手术均有良好的临床效果,但相比之下,预装式IOL更具备操作简单,方便清洁等优势,是一种较好的IOL植入方法。