简介:Inthisstudy,weevaluatethevaluesoflatticethermalconductivityκLoftypeIIGeclathrate(Ge34)anddiamondphaseGecrystal(d-Ge)withtheequilibriummoleculardynamics(EMD)methodandtheSlack'sequation.ThekeyparametersoftheSlack'sequationarederivedfromthethermodynamicpropertiesobtainedfromthelatticedynamics(LD)calculations.TheempiricalTersoff'spotentialisusedinbothEMDandLDsimulations.Thethermalconductivitiesofd-Gecalculatedbybothmethodsareinaccordancewiththeexperimentalvalues.ThepredictionsoftheSlack'sequationareconsistentwiththeEMDresultsabove250KforbothGe34andd-Ge.Inatemperaturerangeof200-1000K,theκLvalueofd-GeisaboutseveraltimeslargerthanthatofGe34.
简介:TheultrafastdynamicprocessinsemiconductorGeirradiatedbythefemtosecondlaserpulsesisnumericallysimulatedonthebasisofvanDrielsystem.Itisfoundthatwiththeincreaseofdepth,thecarrierdensityandlatticetemperaturedecrease,whilethecarriertemperaturefirstincreasesandthendrops.ThelaserfluencehasagreatinfluenceontheultrafastdynamicalprocessinGe.Asthelaserfluenceremainsaconstantvalue,thoughtheoverallevolutionofthecarrierdensityandlatticetemperatureisalmostindependentofpulsedurationandlaserintensity,increasingthelaserintensitywillbemoreeffectivethanincreasingthepulsedurationinthegenerationofcarriers.IrradiatingtheGesamplebythefemtoseconddoublepulses,theultrafastdynamicalprocessofsemiconductorcanbeaffectedbythetemporalintervalbetweenthedoublepulses.
简介:GrazingincidentX-raydiffractionatdifferentgrazinganglesforself-organizedGedotsgrownonSi(001)arecarriedoutandlatticeconstantexpansionsof1.2?paralleltothesurfaceascomparedwiththeSilatticearefoundwithintheGedots.A3.1?latticeexpansionoftheGedotsalongthegrowthdirectionisalsofundbyordinaryX-ray(004)diffraction.AccordingtothePoissonequationandtheVegardlaw,ourresultsinferthattheGedotshouldbeapartiallystrainrelaxedSiGealloywithGecontentofabuot55?2001ElsevierScienceB.V.Allrightsreserved.
简介:ZnOfilmscontainingErandGenanocrystals(nc-Ge)weresynthesizedandtheirphotoluminescence(PL)propertieswerestudied.Visibleandnear-infraredPLintensitiesarefoundtobegreatlyincreasedinnc-Ge-containingfilm.Er-related1.54μmemissionhasbeeninvestigatedunderseveralexcitationconditionsupondifferentkindsofGe,ErcodopedZnOthinfilms.1.54μmPLenhancementaccompaniedbytheappearanceofnc-Geimpliesasignificantcorrelationbetweennc-GeandPLemissionofEr3+.Theincreasedintensityof1.54μminGe:Er:ZnOfilmisconsideredtocomefromthejointeffectofthelocalpotentialdistortionaroundEr3+andthepossibleenergytransferfromnc-GetoEr3+.
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简介:HeteroatomM-ZSM-12zeolites(M=B,Al,Ge,Ga,Fe)arehydrothermallysynthesizedanditisprovedthattheheteroatomMisinvolvedintheframeworkofsynthesizedmolecularsievesbymeansofXRD,IRspectra.TheresultsofadsorptionanddiffusionexperimentsindicatethattheheteroatomMmodifiestheporevolume,specificsurfacearea,andthechannelofZSM-12molecularsieves.
简介:Inthispaper,high-speedsurface-illuminatedGe-on-Sipinphotodiodeswithimprovedeffidencyaredemon-strated.Withphoton-trappingmicroholefeatures,theexternalquantumefficiency(EQE)oftheGe-on-Sipindiodeis〉80%at1300nmand73%at1550nmwithanintrinsicGelayerofonly2μmthickness,showingmuchimprovementcomparedtoonewithoutmicroholes.MorethanthreefoldEQEimprovementisalsoob-servedatlongerwavelengthsbeyond1550nm.Theseresultsmakethemicrohole-enabledGe-on-SiphotodiodespromisingtocoverboththeexistingCandLbands,aswellasanewdatatransmissionwindow(1620-1700nm),whichcanbeusedtoenhancethecapacityofconventionalstandardsingle-modefibercables.Thesephotodiodeshavepotentialformanyapplications,suchasinter-/intra-datacenters,passiveopticalnetworks,metroandlong-hauldensewavelengthdivisionmultiplexingsystems,eye-safelidarsystems,andquantumcommunications.TheCMOSandBiCMOSmonolithicintegrationcompatibilityofthisworkisalsoattractiveforGeCMOS,near-infraredsensing,andcommunicationintegration.
简介:WehavesynthesizedandinvestigatedphysicalpropertiesoftwonewquaternarycompoundsGd2CoAl4T2(T=Si,Ge)singlecrystals,whichareisostructuraltoTb2NiAl4Ge2andEr2CoAl4Ge2.Themostimportantstructuralfeatureofthesematerialsistheanti-CaF2-typeCoAl4T2slabs.Thesematerialsshowmetallicbehaviorbelow300Kandthereisalong-rangeantiferromagnetic(AFM)transitionappearingat20and27KforGdCoAl4Ge2andGd2CoAl4Si2,respectively.ResistivityandheatcapacitymeasurementsalsoconfirmthesebulkAFMtransitions.Furtheranalysisindicatesthatthislong-rangeantiferromagnetismshouldresultfromthemagneticinteractionbetweenlocalmomentsofGd^3+ions.
简介:做Si的Ge(2)sb(2)Te(5)电影被dc劈啪作响magnetronco与Ge2Sb2Te5和Si目标准备了。在在两结晶化温度和阶段转变温度fromface-centred-cubic(fcc)的增加的Te(5)电影结果分阶段执行到的Ge(2)sb(2)的Si的增加六角形(十六进制)阶段。Ge2Sb2Te5电影的抵抗力显示出重要增加,Si做。当在这部电影做Si的11.8at.%时,在退火的460度C以后的抵抗力与undopedGe2Sb2Te5电影相比从64~99终止从1~11m终止(.)厘米和动态抵抗增加增加。这对写阶段变化随机存取记忆的当前的减小很有用。
简介:描述了一种采用HPGe探测器γ能谱法无损测量核材料铀样品并计算样品的生产(纯化)年龄与同位素丰度的方法。该方法不需要其他任何标准源或参考源,对样品的形态(固体、液体)和形状没有限制,由铀样品自身所含多γ射线核素的γ能峰来刻度相对峰效率曲线,由能峰计数率、相对效率、γ射线发射概率等参数确定铀同位素的比值,由^234U与其衰变子体214Bi的活度比值计算其生产年龄。对一个铀总量约5g、^235U浓缩度约90%的24mL液体铀样品,用两套HPGe探测器分别测量不同能区范围的γ能谱:在平面型探测系统获取的低能区能谱中,用^235U的γ能峰刻度相对峰效率曲线,计算了^234U、^228Th(232U子体)与235U的相对比值;在同轴型探测系统获取的高能区能谱中,用^228Th及其子体的γ能峰刻度相对峰效率曲线,计算^238U、^214Bi与^228Th的相对比值,综合计算得到铀样品生产年龄(-32a)及铀同位素丰度,并与样品经过放化分离后,质谱法测量得到的结果进行了比较,生产年龄与丰度比偏差均在5%以内符合。