Inthispaper,high-speedsurface-illuminatedGe-on-Sipinphotodiodeswithimprovedeffidencyaredemon-strated.Withphoton-trappingmicroholefeatures,theexternalquantumefficiency（EQE）oftheGe-on-Sipindiodeis〉80%at1300nmand73%at1550nmwithanintrinsicGelayerofonly2μmthickness,showingmuchimprovementcomparedtoonewithoutmicroholes.MorethanthreefoldEQEimprovementisalsoob-servedatlongerwavelengthsbeyond1550nm.Theseresultsmakethemicrohole-enabledGe-on-SiphotodiodespromisingtocoverboththeexistingCandLbands,aswellasanewdatatransmissionwindow（1620-1700nm）,whichcanbeusedtoenhancethecapacityofconventionalstandardsingle-modefibercables.Thesephotodiodeshavepotentialformanyapplications,suchasinter-/intra-datacenters,passiveopticalnetworks,metroandlong-hauldensewavelengthpisionmultiplexingsystems,eye-safelidarsystems,andquantumcommunications.TheCMOSandBiCMOSmonolithicintegrationcompatibilityofthisworkisalsoattractiveforGeCMOS,near-infraredsensing,andcommunicationintegration.
