Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses

(整期优先)网络出版时间:2016-02-12
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TheultrafastdynamicprocessinsemiconductorGeirradiatedbythefemtosecondlaserpulsesisnumericallysimulatedonthebasisofvanDrielsystem.Itisfoundthatwiththeincreaseofdepth,thecarrierdensityandlatticetemperaturedecrease,whilethecarriertemperaturefirstincreasesandthendrops.ThelaserfluencehasagreatinfluenceontheultrafastdynamicalprocessinGe.Asthelaserfluenceremainsaconstantvalue,thoughtheoverallevolutionofthecarrierdensityandlatticetemperatureisalmostindependentofpulsedurationandlaserintensity,increasingthelaserintensitywillbemoreeffectivethanincreasingthepulsedurationinthegenerationofcarriers.IrradiatingtheGesamplebythefemtoseconddoublepulses,theultrafastdynamicalprocessofsemiconductorcanbeaffectedbythetemporalintervalbetweenthedoublepulses.