简介:Inthispaperthemodelling,analysisandoptimizationofmillimeterwaveoscillatorsareinvestigatedbyusingtheafrequency-domainharmonicbalancetechnique(FDHB),wheretheexternal-circuitimpedanceslookingoutsidefromtheactivedevicearecalculatedwithacombinedtechniqueofmodesexpansion,Galerkin,andcollocationmethods.Theoptimizationresultsareinagreementwiththeexperimentalones,whichshowthereliabilityofthepresentedmodelandoptimization.
简介:<正>00576ACompactTransceiverforWideBandwidthandHighPowerK-,Ka-,andV-BandApplications/D.Yamauchi,R.Quon.Y-HChungetal(NorthropGrummanSpaceTechnology)//2003IEEEMTT-sDigest.—2015用当今先进的InPMMICs和先进的封装技术演示了一种宽带宽(13%~54%)高功率(>500mW)K、Ka及V波段小型收发机。该组件有30多块MMIC和200多个元器
简介:ONSemiconductor公司宣称已采用一种崭新的沟槽工艺技术,它比其他沟槽工艺,能使导通电阻平均降低40%。去年,该公司已将基于创新的沟槽技术用于P沟和N沟MOSFET,并且这种器件已应用于负载管理、电路充电、电池保护和手提式、无线产品中的DC-DC