简介:采用原位拉伸扫描电镜试验对X100级管线钢的动态塑性形变行为进行观察,并运用EBSD微观取向分析技术对形变前后管体组织的取向变化进行分析。结果表明,X100级管线钢的微观组织由针状铁素体、粒状贝氏体和M/A岛组成。在拉伸应力的作用下针状铁素体首先发生形变,随着应变的增加,针状铁素体形变累积到一定程度后,导致粒状贝氏体发生形变。针状铁素体边界和贝氏体基体上的M/A组织钉扎位错使变形不易发生。由EBSD取向可知,晶体在发生形变后轧面的{110}晶面方向沿拉伸形变方向转动。由扫描电镜照片观察到,在外加应力作用下,夹杂物成为微裂纹形核核心并随着外加应力的增加而扩展,最后连接,导致裂纹贯穿基体直至失效。
简介:Themetalorganicvaporphaseepitaxy(MOVPE)growthofindiumgalliumnitride(InGaN)hasbeendiscussedindetailtowardsthefabricationofsolarcell.TheInGaNfilmwithIncontentsupto0.4aresuccessfullygrownbycontrollingthefundamentalgrowthparameterssuchastheprecursorgasflowrates,temperatureetc.TheformationofmetallicInoriginatesfromthehighervalue(0.74)oftrimethylindium/(trimethylindium+triethylgallium)(TMI/(TMI+TEG))molarratiowithlow(4100)V/Ⅲweightmolarratiowhilethelowervalue(0.2)ofTMI/(TMI+TEG)causesthephaseseparation.Itisalsonecessarytocontrolthegrowthrateandepitaxialfilmthicknesstosuppressthephaseseparationinthematerial.ThecrystallinequalityofgrownfilmsisstudiedanditisfoundtobemarkedlydeterioratedwithincreasingIncontent.ThelatticeparametersaswellasthethermalexpansioncoefficientmismatchbetweenGaNtemplateandInGaNepi-layerareprimarilyconsideredasthereasonstodeterioratethefilmqualityforhigherIncontent.ByusingIn0.16Ga0.84Nfilms,ann+-phomo-junctionstructureisfabricatedon0.65mmGaNtemplate.Forsuchadevice,theresponsetothelightillumination(AM1.5)isobservedwithanop-ncircuitvoltageof1.4Vandtheshortcircuitcurrentdensityof0.25mA/cm2.Toimprovetheperformanceaswellasincreasesolarphotoncapturing,thedeviceisfurtherfabricatedonthickGaNtemplatewithhigherIncontent.TheIn0.25Ga0.75Nn+-pjunctionsolarcellisfoundbetterperformancewithanop-ncircuitvoltageof1.5Vandtheshortcircuitcurrentdensityof0.5mA/cm2.ThisistheInGaNp-nhomo-junctionsolarcellwiththehighestIncontenteverreportedbyMOVPE.