简介::Twonovelpoly[(3-alkyhhiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s]derivatives,poly[(3-butylthiophene-2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](PBTDMABQ)andpoly[-(3-octylthiophene2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](POTDMABQ),weresynthesized.Thebandgapsofthetwopolymersarecalculatedas1.75eVforPBTDMABQand1.69eVforPOTDMABQ,respectively.Thehomogenousfilmsofthetwopolymerswerepreparedandtheirthird-ordernonlinearopticalpropertieswerestudiedbythebackwarddegeneratefour-wavemixingat532nm.Byusingtherelativemeasurementtechnique,thethird-ordernonlinearopticalsusceptibilitiesofPBTDMABQandPOTDMABQarecalculatedas5.62×10^-9and1.22×10^-8ESU,respectively.Itisfoundthatsubstitutedalkygroupshavestrongeffectsonthebandgapandnonlinearopticalpropertiesofthetwopolymers.Therelativelybigthird-ordernonlinearopticalsusceptibilitiesandsmallbandgapofPOTDMABQresultedmainlyfromthelongeralkylwithstrongelectron-donatingabilitycanenhancethedelocationdegreeofconjugatedπelectronics.
简介:有约束力的精力和浅施主杂质的空效果精力移动在拉紧的GaN/AlxGa1xN球形的有限潜力的量声明点(QD)基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加,达到最大的值,然后当QD半径为任何电场增加,减少。而且,有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多,并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力,并且结果证明紧张效果更加提高杂质绑定精力,特别为小QD尺寸。我们也在我们的工作考虑绝缘的失配。
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.