简介：PitformationandsurfacemorphologicalevolutioninSi(001)homoepitaxyareinvestigatedbyusingscanningtunnelingmicroscopy.Anti-phaseboundaryisfoundtogiverisetoinitialgenerationofpitsboundbybunchedDBsteps.Theterracesbreakupandarereducedtoacriticalnucleussizewithpitformation.Duetoanisotropickinetics,adownhillbiasdiffusioncurrent,whichislargeralongthedimerrowsthroughthecentreareaoftheterracethanthroughtheareaclosetotheedge,leadstotheprevalenceofpitsboundby{101}facets.Subsequentannealingresultsinashapetransitionfrom{101}-facetedpitstomulti-facetedpits.

简介：利用Gaussian-94计算程序中的B3LYP方法,在6-311+G(2d)6d基组下,对Si5,Si5H3,Si5H6,Si5Li3和Si5Na3原子簇的几何结构进行优化和频率计算.结果表明,Si5原子簇中最稳定的具有D3h对称性的结构中,位于同一平面上的3个Si原子确实具有剩余的成键能力,可以与3个H,Li,Na原子和6个H原子形成稳定的化合物.研究还发现,虽然H,Li和Na都属同一主族,但它们与Si5原子簇中Si原子的键连方式却不同,而且它们的加入,对Si5原子簇的'三角双锥'结构也有不同的影响.

简介：水晶的Au5Si2/Si异质接面nanowires(Au5Si2/SiNWs)被热蒸发的SiO粉末在一个低真空系统在厚黄金涂的硅底层上获得。生产Au5Si2/Si异质接面的结构分析被采用一台传播电子显微镜(TEM)和一个选择区域执行电的衍射计。化学作文被纳入TEM的一个精力散的X光分光镜学习。一个二拍子的圆舞生长模型被建议描述Au5Si2/SiNWs的形成。在第一步期间，水晶的SiNWs经由在相对高的温度把帮助氧化物的生长过程与vapour-liquid-solid模型相结合的生长机制被形成。在第二步，preformedSiNWs的温度减少和减少片断与残余Au反应由一个solid-liquid-solid过程形成单个水晶的Au5Si2nanowires。现在的工作应该基于nanowires为未来合成和高质量的金silicidenanowires和微电子设备的研究是有用的。

简介：ForthecomingsuperheavytestexperimentatRIBLL,wedevelopedaSi-arrayderector(showninFig.1)andhavetesteditwitha3-componentαsource.Thisdetectorconsistsofoneposition-sensitiveSi-detector(PSD),fourlarge-areaSiphoto-diodedetectors(SPD)andeightsmall-areaSiphoto-diodedetectors,theirsensitive

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简介：Wehavestudiedtheelectronic,bondingandenergeticcharacteristicsoftheFe-Sibinarysystemusingthetight-bondingextendedHuckelmethod.AmongtheFe-Sibinarycompounds,FeSihasthemostsymmetricgeometricarrangementinthecrystalstructure.Italsopossessesthelargestcohesiveenergyperatom.ThiscorrelatestothefactthatFeSiisthemoststablecongruently-meltingcompoundinthebulkphasediagram.Anestimateofinteractionenergiesbetweendifferentatomsisalsogiven.

简介：为研制具有较宽频带微波吸收性能的材料,采用机械合金化法制备CoxFe80-xSi20（x=0,6,10,14摩尔百分数）合金粉体,使用SEM、XRD和矢量网络分析仪等测试手段,研究了合金粉体微观结构及Co-Fe-Si合金微波吸收性能。结果表明：制备的合金粉末呈片状,主要由-Fe相组成;Co的添加使Co-Fe-Si合金出现两个微波吸收峰。在较高频段处的微波吸收峰值随Co的添加先增大后减小。在涂层厚度为1.8mm时,x=10的合金低频处的反射率最小值最小,合金吸波峰频率和峰值分别为6.2GHz和-14.8dB,合金在高频处吸波峰频率和峰值分别为18GHz和-8.8GHz,合金反射率低于-5dB的带宽达14GHz,具有良好的微波吸收宽频效应。

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简介：Moleculardynamics(MD)simulationswereperformedtostretchtherectangulargraphenesheetsdopedwithsilicon,nitrogenorboronatoms.Young’smodulus,ultimatestress(strain)andenergyabsorptionweremeasuredforthegraphenesheetswiththedopingconcentration(DC)rangingfrom0to5%.Theemphasiswasplacedonthedistincteffectsofeachindividualdopantonthefundamentalmechanicalpropertiesofgraphene.TheresultsindicatedthatincorporatingthedopantsintographeneledtoanalmostlineardecreaseinYoung’smodulus.Monotonicreductionsinultimatestrength,ultimatestrainandenergyabsorptionwerealsoobserved.Suchdopingeffectswerefoundtobemostsignificantforsilicon,lesspronouncedforboron,andsmallornegligiblefornitrogen.Theoutputsprovideanimportantguidanceforthedevelopmentandoptimizationofnovelnanoscaledevices,andfacilitatethedevelopmentofgraphene-basedM/NEMS.

简介：Anovelread-onlysuper-resolutionopticaldiscstructure(substrate/masklayer/dielectriclayer)ispropsedinthispaper.ByusingaSithinfilmasthemasklayer,therecordingpitswithadiameter380nmandadepth50nmarereadoutonthedynamicmeasuringequipment;thelaserwavelengthλis632.8nmandthenumericalapertureis0.40.IntheoftheSithinfilmis18nmandthesignal-to-noiseratiois32dB.

简介：Ｂｉｎａｒｙ　Ｒｅａｃｔｉｏｎ　Ｍｅｃｈａｎｉｓｍ　ｏｆ　２８Ｓｉ＋２４Ｍｇ　ａｔ　１５６．３　ＭｅＶＢｉｎａｒｙＲｅａｃｔｉｏｎＭｅｃｈａｎｉｓｍｏｆ２８Ｓｉ＋２４Ｍｇａｔ１５６．３ＭｅＶ￥ＷａｎｇＳｈｕｆａｎｇ；ＪｉｎＧｅｎｍ...

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简介：WehavestudiedtheinterfacialstructuresofAlN/Si(111)grownbymetal-organicchemicalvapourdeposition.X-rayphotoelectronspectroscopyandAngerelectronspectroscopywereusedtoanalysethecomponentsandchemicalstructuresofAlN/Si(111).Theresultsindicatedthatamix-crystaltransitionregion,approximately12nm,waspresentbetweentheAlNfilmandtheSisubstrateanditwascomposedofAlNandSi3N4.AfteranalysiswefoundthattheexistenceofSi3N4couldnotbeavoidedintheAlN/Si(111)interfacebecauseofstrongdiffusionat1070℃.EveninAlNlayerSi-Nbonds,Si-Sibondscanbefound.

简介：N-ZnO/p-Si异质接面被内在的ZnO电影的劈啪作响的免职在希腊语的第二十三个字母底层上准备。ZnO电影的厚度被从1h改变免职时间到3h改变。这些结构的电的性质从电容电压(C-V)被分析并且当前电压(I-V)特征表现在一个黑暗房间里。结果证明所有样品显示出强壮的修正行为。为有ZnO电影的不同厚度的样品的光电的性质被测量开的电路电压和短路电流调查。相片电压被坚守，这被发现当光电流变化时，与厚度一起的320mV几乎不变很多。ZnO电影的厚度的功能被调查的光电的效果的变化机制。

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简介：HeteroepitaxialLaAlO3filmsweregrownonaSrTiO3/Si(100)substratebylasermolecularbeamepitaxyunderdifferentoxygenpressures,andtheirpropertiessuchascrystallinityandelectricalcharacteristicswereexperimentallyinvestigatedusingthevariousmeasurementmethods.Theresultsshowthatmostpropertiesdependmainlyonthedepositionoxygenpressure.ThecrystallinityandtheC-VandI-Vcharacteristicscanbegreatlyimprovedwiththeincreasingoxygendepositionpressure.Moreover,afterannealedat1050~CinN2ambient,theC-VandI-VcharacteristicsofLAOfilmsdepositedattheloweroxygenpressurearealsoimprovedduetothedecreaseofoxygenvacanciesinLAOfilms.

简介：WehavedevelopedaSi/grapheneoxideelectrodesynthesizedviaultrasonication-stirringmethodunderalkalinecondition.Scanningelectronmicroscopy(SEM),transmissionelectronmicroscope(TEM),EDSdot-mappingandhigh-resolutiontransmissionelectronmicroscopy(HRTEM)resultsshowthatSiparticlesareevenlydispersedonthegrapheneoxidesheets.Theelectrochemicalperformancewasinvestigatedbygalvanostaticcharge/dischargetestsatroomtemperature.TheresultsrevealedthatSi/grapheneoxideelectrodeexhibitedahighreversiblecapacityof2825mAh/gwithacoulombicefficiencyof94.6%at100mA/gafter15cyclesandacapacityretentionof70.8%after105cyclesat4000mA/g.Theseperformanceparametersshowagreatpotentialinthehigh-performancebatteriesapplicationforportableelectronics,electricvehiclesandrenewableenergystorage.