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简介：Thispaperreportsthattheetchingmorphologyofdislocationsin8°off-axis4H-SiCepilayerisobservedbyusingascanningelectronicmicroscope.Itisfoundthatdifferenttypesofdislocationscorrespondwithdifferentdensitiesandbasalplanedislcation(BPD)arrayandthreadingedgedislocation(TED)pileupgroupliealongsomecertaincrystaldirectionsintheepilayer.Itisconcludedthattheelasticenergyofthreadingscrewdislocations(TSDs)ishighestandTEDsislowestamongthesedislocations,sothedensityofTSDsislowerthanTEDs.TheBPDscanconverttoTEDsbutTSDscanonlypropagateintotheepilyerinspiteofthehigherelasticenergythanTEDs.ThereasonoftheformofBPDsarrayinepilayeristhatthebigstepalongthebasalplanecausedbyfacedefectsblockedtheupstreamatoms,andTEDspileupgroupisthatthedislocationsslideisblockedbydislocationgroupsinepilayer.

简介：与飘移散开(DD)的联合使用模型，试验性的测量参数和小信号的正弦曲线不变的分析，我们为4H-SiC提取Y参数埋葬隧道的金属氧化物半导体域效果晶体管(BCMOSFET)。输出电线走火水流获得G，梅森的不变的U分别地在普通来源的配置f(T)和摆动f(最大)的最大的频率为外推的统一水流获得频率被计算。这里f(T)=800MHz和f(最大)=5GHz为4H-SiCBCMOSFET被提取，当地效果活动性到达它的山峰时，珍视87cm(2)/Vs什么时候V-GS=4.5V。模拟结果清楚地证明4H-SiCBCMOSFET和地效果活动性的典型频率是优异的，由于新奇结构，与常规MOSFET相比。

简介：Duetolowactivationcharacteristics,desirablehigh-temperaturestrength,goodresistancetoradiationdamageandusablefabricationproperties,vanadium(V)alloysareattractivecandidatestructuralmaterialsforfusionreactors[1].Irradiationinducedhardening/embrittlementatlowtemperatureisamajorproblemforthematerialsapplicationinfusionreactor[2].Inthisstudy,H/Heionswithvariousenergieswereusedtoirradiateapurevanadium(V)andaValloy(V-4Ti)toobtainadamageplateaufromsamplesurfacetothedepthof1.5m,asshowninFig.1[3].Thedetailsofirradiationparameters(energies,fluences)forHandHeionsareshowninTable1.NanoindentationwasperformedtoinvestigatethehardeningbehaviorofV-4TialloyandpureVunderirradiation.

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简介：Siliconcarbidefiber/siliconcarbidematrix(SiCf/SiC)compositesareofinterestasafuelcladdingandstructuralmaterialindesignsofadvancednuclearreactorduetotheirsuperiorthermo-mechanicalpropertiesandstabilitiesandlowcross-sectionforneutroncaptureunderthesevereserviceenvironmentincludinghightemperatureandhighenergyneutronbombardment.SiCf/SiCcompositionsconsistsofSiCfiberandSiCmatrixwhichexistinwellover100polymorphsdependentonthevariedstackingofSi-Cclose-packedatomicplanes,2H-SiC,4H-SiC,6H-SiC,3C-SiC,15R-SiC,etc.EnergeticHeatomscanbecreatedandaccumulatedvianuclearreactions.HeatomsagglomerateandcoarsenintoHebubblesandcandeterioratestructuralpropertiesbyinducingcrackandcreep.Inthisexperiment,thedamageofn-type4H-SiCwafers(researchstandard,suppliedbytheCreeResearchInc.)withathicknessof0.38mmimplantedwith100keVHe+toafluenceof31016He+/cm2andpost-implantation-annealedbehavioratdifferenttemperaturewerestudiedusingRamanscatteringspectroscopy.

简介：对制造的单mesa终端4H-SiCPIN二极管,采用数值仿真和测试结果比对的方法,分析了各向异性迁移率效应对4H-SiCPIN二极管正向直流特性的影响。详细阐述了器件的正向直流仿真物理模型和参数选取,其中,迁移率的各向异性关系是在各向同性迁移率模型的基础上引入的,载流子寿命采用空间赋值的方法代入模型进行计算。对比结果显示,采用各向同性迁移率模型的仿真结果与实验值偏差较大,对迁移率模型进行各向异性修正后,仿真结果与实验结果符合得较好。研究表明,实际制造的4H-SiCPIN二极管在直流开态下,存在迁移率的各向异性效应。

简介：H+-restackednanosheetsandnanoscrollspeeledfromK4Nb6O17displaydifferentstructuresandsurfacecharacters.Thetworestackedsampleswithincreasedsurfaceareashaveanamazingvisible-lightresponseforthephotodegradationofdyes,whichissuperiortocommercialTiO2(P25)andNb2O5.Bycomparison,H+/nanosheetshavearelativelyfasterphotodegradationrateoriginatedfromlargeandsmoothbasalplane.Theworkrevealsthatdyeadsorbedontheunfoldednanosheetscaneffectivelyharvestsunlight.Duetofacilepreparation,low-costandhighphotocatalyticefficiency,H+/nanosheetsandH+/nanoscrollsmightbeusedforthevisiblelight-drivendegradationoforganicdyesasasubstituteforTiO2inindustry.

简介：选用aug-cc-pVTZ及aug-cc-pVQZ基组对不同H2-H2位形进行了量子化学计算,外推出了氢分子间各向异性ab-initio作用势。依据实验数据确定出氢分子相互作用的5-体模型,在全局最优算法基础上拟合出了包含电四极矩项、多体极化作用项及三体关联项等在内的氢分子间各向异性作用势。结果验证了拟合势与ab-initio势能曲线几乎重合,两者偏差落在（-1.35K,1.29K）范围内;得出的氢分子第二维里系数与实验结果一致。

简介：分子的动态模拟被执行在交流上调查事件精力的效果:从C和H的H电影生长原子流动。我们的模拟证明在低事件精力(1eV)的电影生长被H和C原子的吸附统治。在中等事件精力(10和20eV)，有在表面吸附的H原子的事件H原子的抽象反应变得重要。在高事件精力(30和40eV)，交流:H电影生长是一个二拍子的圆舞过程：一个人是吸附和C原子的浅培植，并且其它是H原子的深培植。[从作者抽象]

简介：Weexperimentallydemonstratea4×4nonblockingsiliconthermo-optic(TO)switchfabricconsistingofthreestagesoftunablegeneralizedMach–Zehnderinterferometers.All24routingstatesfornonblockingswitchingarecharacterized.Thedevice’sfootprintis4.6mm×1.0mm.Measurementsshowthattheworstcrosstalkofallswitchingstatesis-7.2dB.Theon-chipinsertionlossisintherangeof3.7–13.1dB.TheaverageTOswitchingpowerconsumptionis104.8mW.

简介：In2010,theBESCollaboration[1]foundaclearenhancementintheK0K0massdistributionintheJ=ψ!ηK0K0decay.SuchanenhancementisusuallyasignatureofanL=0resonancearoundthreshold,whichinthiscasewouldcorrespondstoanh1statewithquantumnumbersIG(JPC)=0??(1+??).Thish1statewaspredictedbytheChiralUnitarytheoryintheKKinteraction.Becauseoftheconversationlaw,thisstatecanonlydecaytoK0K0channel,andcanbestudiedefficientlyintheJ=ψ!ηK0K0decay.

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简介：ConstructingareasonablereactionkineticmodelforCr-containingwasteincinerationisofhighsignificancetostudytheeffectofvariousfactors,suchastemperature,Cl,onitshexavalentchromiumcompounds.Inthispaper,aprimaryCr/H/Air/ClreactionkineticmodelisbuiltandstudiedbyGaussian03codewithquantumchemistrytheory.Numericalresultsshowthattherearetwooverallreactionsinthemodel,eachofthetwooverallreactionsconsistsoftheirrespectivetwoelementaryreactions.Sothetwooverallreactionsshouldbeomittedfromthemodel.Instead,thefourelementaryreactionsshouldbeaddedintheCr/H/Air/Clreactionkineticmodel.Theactivationenergiesofthefourelementaryreactionsarealsocalculated.

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简介：我们介绍自发的对称碎在Pati之间的acouplingbetween的顺序—Salam和电镀物品弱对称苏(4)_(PS)直接X苏(4)_(EW)可伸缩以便在宏大统一精力在联合常数之中建立一种算术地一致的关系。与减已知的夸克和雷普顿的雷普顿量数字那里的酒吧的价值，由传递includingright的中微子，我们能在直到电磁的U(1)_(他们)的层次放大的不同精力发现混合角度关系。

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简介：Therearemoreandmorecountriestoakeanefforttothestudiesofvanadiumalloyforfusionapplication.NIFSinJapanhasrecentlydevelopedan80kgheatV4Cr4Tialloy(NIFS-heat2)aftertheproductionofa500kgscaleV4Cr4TiinU.S.severalyearsago.PropertyevaluationofthealloyhasbeenputintoaninternationalcollaborationprogramunderthecoordinationofIEA(InternationalEnergyAgency).SWIPhasjoinedthecollabrationonthehydrogenembrittlementresistanceevaluationofthealloyt.