Thispaperreportsthattheetchingmorphologyofdislocationsin8°off-axis4H-SiCepilayerisobservedbyusingascanningelectronicmicroscope.Itisfoundthatdifferenttypesofdislocationscorrespondwithdifferentdensitiesandbasalplanedislcation(BPD)arrayandthreadingedgedislocation(TED)pileupgroupliealongsomecertaincrystaldirectionsintheepilayer.Itisconcludedthattheelasticenergyofthreadingscrewdislocations(TSDs)ishighestandTEDsislowestamongthesedislocations,sothedensityofTSDsislowerthanTEDs.TheBPDscanconverttoTEDsbutTSDscanonlypropagateintotheepilyerinspiteofthehigherelasticenergythanTEDs.ThereasonoftheformofBPDsarrayinepilayeristhatthebigstepalongthebasalplanecausedbyfacedefectsblockedtheupstreamatoms,andTEDspileupgroupisthatthedislocationsslideisblockedbydislocationgroupsinepilayer.