简介:为了明确团聚现象及表面性质对ZnS纳米材料发光性质的影响,采用SiO2对ZnS材料进行了表面修饰,并对ZnS及ZnS/SiO2复合材料的光学性质进行对比研究。采用吸收光谱分析了包覆前后光吸收性质的差异,发现SiO2包覆后ZnS纳米材料的带边由333nm红移至360nm。为了研究ZnS纳米材料与ZnS/SiO2纳米复合材料的光发射性质,分别对含纳米材料的水溶液样品及粉末样品的发光光谱进行了采集。对比研究的结果表明,SiO2包覆后ZnS纳米材料在蓝紫光区的发光得到了明显增强。以氙灯作为激发光源所获得荧光光谱显示ZnS/SiO2粉末样品发光的积分强度增大为原来的17.5倍,但相同条件下针对溶液样品的测试结果显示其发光强度只增大了1.1倍,这种增强可用SiO2的存在抑制了ZnS纳米粒子间的团聚来解释,且这一推断由325nm紫外激光激发下获得的光致发光数据进行了验证。
简介:Inthiswork,MoOxpromotedIr/SiO2catalystswerepreparedandusedfortheselectivehydrogenolysisoftetrahydrofurfurylalcohol(THFA)to1,5-pentanediolinacontinuousflowreactor.Theeffectsofdifferentnoblemetals(Ir,Pt,Pd,Ru,Rh),supportsandIrcontentswerescreened.Amongtheinvestigatedcatalysts,4wt%Ir-MoOx/SiO2withaMo/Iratomicratioof0.13exhibitedthebestcatalyticperformance.ThesynergybetweenIrparticlesandthepartiallyreducedisolatedMoOxspeciesattachedonthemisessentialfortheexcellentcatalyticperformanceofIr-MoOx/SiO2.ThecatalystexhibitedabetterhydrogenolysisefficiencyofTHFAwiththeselectivityof1,5-pentanediolof65%–74%ataconversionofTHFAof70%–75%whentheinitialTHFAconcentrationisrangingfrom20wt%and40wt%.AndhighersystempressurewasalsoinfavoroftheconversionofTHFA.Duringastabilitytest,theconversionofTHFAand1,5-pentanediolyieldoverIr-MoOx/SiO2decreasedwithreactiontime,whichcanbeexplainedbytheleachingofMospeciesduringthereaction.
简介:Thebaryonspectrumandthebaryoncouplingsaretwoofthemostimportantissuesinhadronicphysicsandtheyareattractingmuchattention.Bothontheexperimentalandtheoreticalsides,thenucleonexcitedstatesbelow2.0GeVhavebeenextensivelystudied[1].However,thecurrentinformationforthepropertiesofstatesaroundorabove2.0GeVisscarce.Ontheotherhand,inthisenergyregion,manytheoreticalapproacheshavepredictedmissingNstates,whichhavenotbeensofarobserved.Hence,thestudyofthepossibleroleplayedbythe2.0GeVregionnucleonresonancesintheavailableaccuratedataistimelyandcouldshedlightintothecomplicateddynamicsthatgovernsthehighexcitednucleonspectrum.
简介:Nanowireshaveattractedmoreandmoreinterestinrecentyearsduetotheiruniquepropertiescomparedtobulkmaterials[1].Thequitedifferentpropertiespossessedbynanowiresaremainlycausedbytheirhighsurface-tovolumeratio[2].Behaviorsofnanowiresunderirradiationconditionshavealsoattractedintensiveattentionintheseyears[3??5].Ithasbeenproposedthatnanowiresmayberadiationresistancebecausetheirlargesurface-to-volumeratio,andmeanwhilethesurfacearetheperfectsinksfordefectscreatedintheradiationprocess[3].