简介:Organicmultiplequantumwell(OMQW)structuresconsistingofalternatinglayersoftris(8-quinolinolato)aluminum(Ⅲ)(Alq3)an2-(4-biphenylyl)-5-(4-ter-butylphenyl)-(1,3,3-oxadiazole)(PBD)havebeenfabricatedbyorganicmolecularbeamdeposition(OMBD).Theindividuallayerthicknessinthemultilayersampleswasvariedfrom6nmtp20nm.ThemultiplequantumwellstructuresweredeterminedbylowangleX-raydiffraction,opticalabsorptionandphotoluminescence(PL).ThePLspectranarrowandtheemissionenergyhasbeenobservedtoshifttohigherenergycomparedwiththatinthemonolayerstructure,suggestingaquantumsizeeffect.
简介:Thesurfaceandinterfaceelectronicstatesoftris-(8-hydroxyquinoline)aluminum(Alq3)/indium-tinoxide(ITO)weremeasuredandanalyzedbyX-rayphotoelectronspectroscopy(XPS).Theresultsindicatedthat,inAlq3molecule,thebindingenergy(Eb)ofAlatomsis70.7eVand75.1eV,correspondingtoAl(O)andAl(Ⅲ),respectively;ThebindingenergyofCis285.8eV,286.3eV,and286.8eV,correspondingtoCofC-Cgroup,C-O,andC-Nbond,respectively.Nisthemainpeaklocatingat401.0eV,correspondingtoNatomofC-N=C.OatomsmainlybondtoHatom,withthebindingenergyof533.2eV.AsthesputteringtimeofAr+ionbeamincreases,Al2p,C1s,N1s,O1s,In3d5/2andSn3d5/2peaksslightlyshifttowardslowerbindingenergy,andAl2p,C1sandN1speaksgetweaker,whichcontributestodiffusingtheoxygen,indiumandtininITOintoAlq3layer.
简介:Thebandgappropertiesofone-dimensionalphotoniccrystalswithadefectlayerofnegativerefractiveindexmaterialsarestudied.Thedefectmodewidthisbiggerthanthatofconventionalone-dimensionalphotoniccrystalswithadefectlayerofpositiverefractiveindexmaterials.Thedefectmodeoftheformerisdifferentfromthatofthelatter,shiftstowardsthedirectionofhighfrequency(shortwavelength),andhasabiggershiftingvelocity.Furthermoretheeffectsonthetransmissionpropertiesoftheformerphotoniccrystalscausedbychangeinthepositionofthedefectlayerofnegativerefractiveindexareinvestigated.Finallytheopticalenhancementoftheformerphotoniccrystalsisalsoinvestigated.
简介:Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.
简介: 简介: AD9709是模似器件公司生产的一种双通道高速8位CMOSD/A转换器,它是双通道TxDAC引脚兼容系列产品的成员之一,该系列器件可提供8、10、12和14位分辩率.AD9709集成了两个高品质8位TxDAC+总核、一个电压基准和数字接口电路,采用48引脚小型LQFP封装.这种D/A转换器可提供特别的ac和dc性能,同时支持达125MSPS速率. ……
简介:Doubledataratesynchronousdynamicrandomaccessmemory(DDR3)hasbecomeoneofthemostmainstreamapplicationsincurrentserverandcomputersystems.Inordertoquicklysetupasystem-levelsignalintegrity(SI)simulationflowfortheDDR3interface,twosystem-levelSIsimulationmethodologies,whichareboard-levelS-parameterextractioninthefrequency-domainandsystem-levelsimulationassumptionsinthetimedomain,areintroducedinthispaper.BycomparingtheflowofSpeed2000andPowerSI/Hspice,PowerSIischosenfortheprintedcircuitboard(PCB)board-levelS-parameterextraction,whileTektronixoscilloscope(TDS7404)isusedfortheDDR3waveformmeasurement.Thelabmeasurementshowsgoodagreementbetweensimulationandmeasurement.ThestudyshowsthatthecombinationofPowerSIandHspiceisrecommendedforquicksystem-levelDDR3SIsimulation.