Intrinsic Limits of Electron Mobility in Modulation-Doped AIGaN/GaN 2D Electron Gas by Phonon Scattering-中国期刊网

摘要 Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.

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Intrinsic Limits of Electron Mobility in Modulation-Doped AIGaN/GaN 2D Electron Gas by Phonon Scattering

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Intrinsic Limits of Electron Mobility in Modulation-Doped AIGaN/GaN 2D Electron Gas by Phonon Scattering

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