简介：Thispaperproposesatechniquetomitigatethevoltageunbalanceissuecausedbythehighpenetrationofphotovoltaic(PV)systemsintothelowvoltagedistributionnetworks(LVDN)usingasinglephaseenergystoragesystem(ESS).TheESScomprisesabi-directionalpowerflowinverterandabatterybank.Thesystemiscapableofabsorbingtheexcesspoweranddeliveringpowertothenetworkinordertokeepthevoltageunbalancefactor(VUF)belowthestatutorylimitof1%.Investigationsarecarriedoutintheexperimentalsmall-scaleenergyzone(SSEZ).TheexperimentalresultsdemonstratethattheESSiscapableofmitigatingtheVUFofthenetwork.

简介：Ionchannelsareessentialforcellularsignaling.Voltage-gatedionchannels(VGICs)arethelargestandmostextensivelystudiedsuperfamilyofionchannels.Theypossessmodularstructuralfeaturessuchasvoltage-sensingdomainsthatencircleandformmechanicalconnectionswiththepore-formingdomains.Suchfeaturesareintimatelyrelatedtotheirfunctioninsensingandrespondingtochangesinthemembranepotential.Inthepresentwork,wediscussthethermodynamicmechanismsoftheVGICsuperfamily,includingthetwo-stategatingmechanism,sliding-rockingmechanismofthevoltagesensor,subunitcooperation,lipid-infiltrationmechanismofinactivation,andtherelationshipwiththeirstructuralfeatures.

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简介：AnewLDMOSTstructure,namedB-LDMOSTthathasaburiedlayerunderthedrainisproposed.Theburiedlayerisnotconnectedtothedriftregion,soitcanoptimizetheverticalfielddistributionandincreasebreakdownvoltage.TheanalysisandthesimulatedresultsshowthatB-LDMOSTcanincreasebreakdownvoltage,withalmostnegligibleinfluenceontheotherparameterssuchason-resistance,switchingtime,andsoon.

简介：Uptothefifties,bulkoilcircultbreaker（c.b.）wasthemainbreakertypeusedinChina.Fromthesixtieson,allEHVc.b.wereair-blasttype,butowingtotheirairleakageandfrequentmaintenanceworkrequired,alotofminimumoilc.b.wereimported;intheseventies,minimumoilc.b.wasthemainbreakertypeusedalloverthecountryinthevoltagerangeof6-220kV;atthebeginningoftheeighties,500kVSF6.c.b.wereputinserviceandgraduallyex-tendeddownto220kV,110kVandevento10kV,theirnumberisincreasing.Atthesametime,mediumvoltagevacuumc.b.beganto

简介：Inthispaper,theinfluenceofworkingelectrolyteonhigh-frequencyelectricalperformanceofwettantalumcapacitorsisstudied.EmphasisisespeciallyputonthestudyofthecontributionofdepolariserinreducingEquivalentSeriesResistance(ESR).Accordingtothetheoryofdepolarizationinelectrochemistryandthetheoryofcathodecapacitanceofelectrolyticcapacitor,differentkindsofdepolarisersareaddedseparatelyintotheforegoneelectrolyte.Thencapacitorsareassembledwithtantalumcoresdippedwiththecompoundedelectrolytes.ThebestdepolariseranditsconcentrationinthewholeelectrolytecouldbeselectedaccordingtothetestresultsofthecapacitanceandESRofthecapacitors.TheresultsofourexperimentshowthatdepolariserFe2(SO4)3usedinworkingelectrolyteof100V/100μFwettantalumcapacitorscanhelptoobtainlowerESRandhighercapacitanceatfrequencyfrom0.1kHzto100kHz.

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简介：Low-voltageElectricalApparatus(LVEA)whichisakeylinkfortransmittingelectricalpowertousers,isconnectedbetweentransformerandloadmainlytobeusedfordistribution,pro-tection,controllingofelectricalcircuitsandalsoforstarting,adjusting,stoppingandindicatingofload.Thelow-voltageelectricalproductsincludeswitch

简介：Thispaperpresentsauniquenoveldesignofthephase-shiftedcascadehighvoltageinverter.Thehighvoltageinverterutilizesfewerpowerswitchesandsuppliesabalanceload.TheusageofphaseshifttransformerandphaseshiftingSPWMensuresthatinputandoutputharmonicwavecontentislowandoutputvoltagechange(du/dt)hasalowrate,meetingalltherequirementsofthepowerauthorities.Themostout-standingfeatureistheenergysavingwithveryfastcostrecovery.

简介：这研究为预言并且分类电压门离子通道描述方法。第一，一个标准支持向量机器(SVM)方法分别地为由使用氨基酸作文和dipeptide作文预言离子通道被开发，与82.89%和85.56%的精确性。当与希腊语的第二十三个字母强风类似搜索结合了时，这个SVM方法的精确性从85.56%～89.11%被改进。然后，我们为由使用dipeptide作文分类离子通道(钾，钠，钙，和氯化物)开发了一个SVM方法并且完成了96.89%的全面精确性。我们进一步由使用联合基于dipeptide的SVM的一个混合方法完成了97.78%的分类精确性并且隐藏Markov模型方法。网服务者VGIchan为预言上面来临并且分类电压门离子通道使用被开发了。VGIchan在www.imtech.res.in/raghava/vgichan/是自由地可得到的

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简介：这篇论文建议一个当前的控制计划因为在imbalanced和弄歪的供应电压下面的一个连接格子的脉搏宽度调节的人(PWM)电压来源变换器(GC-VSC)调节。控制计划在积极同时地旋转的引用框架被实现并且一个单身者填写了反响的控制器分别地在2ω和6ω的频率调节了的比例的积分(PI)管理者和多频率。与在一个原型GC-VSC系统上消除活跃电源摆动和当前的泛音的目标，试验性的结果在供应电压不平衡和失真期间验证建议当前的控制计划的可行性。

简介：Inviewofthelimitationsinthepredictionofpollutionflashovervoltagebyleastsquaresregression,amethodtopredictpollutionflashovervoltagebyrobustregressionisproposed.Accordingtotestingvoltageandthedataofsaltdepositdensity(ρSDD)andnon-solubledepositdensity(ρNSDD),theregressioncoefficientissolvedbyacomplexweightingleastsquareiterationalgorithm.Initerativecalculations,theweightfunctionisadopted,inwhichtheweightcoefficientisthefunctionoftheresidualerroroflastiterationtoweakentheinfluenceofsingularvaluesontheregressioncoefficient.ThecharacteristicexponentdenotingρSDDinfluenceandcharacteristicexponentdenotingρNSDDinfluencearemappedbytheregressioncoefficient,andthusthepollutionflashovervoltageofinsulatorscanbepredicted.Throughthecomparisonoftestresults,robustregressionresultsandleastsquaresregressionresults,theeffectivenessoftheproposedrobustregression-basedforecastingmethodisverified.

简介：复合微分电压比较仪(MDVC)的一个新奇图案为减少电流和电源驱散被介绍。根据关系操作和逻辑操作的特殊性质，比较仪的部分在一些例子是冗余的，并且能因此被关掉。由选择并且切换当前的线路，几有效的微分对被单个尾巴电流stage-by-stage偏导，冗余的比较仪被切他们的尾巴电流关掉。作为结果，静止电流和电源消费极大地被减少。切换电流被输入完成微分对晶体管自己和因此没有额外的开关被要求。当MDVC很快被使用时analog-to-digital变换器(模数转换器)，它的当前的驱散比常规比较仪的低得多。这体系结构能也为逻辑操作在窗户比较仪，最大或最小的比较仪，和比较仪被使用。在所有这些盒子中的电源驱散能显著地被减少。

简介：最高的接触n类型有低操作电压的器官的地效果晶体管被采用Ta2O5/PMMA作为双绝缘体和PTCDI-C12作为半导体活跃的层。Ta2O5层被使用简单节俭的阳极化技术准备，PMMA层被使用纺纱涂层方法准备。与有单个Ta2O5绝缘体，有两倍绝缘体的设备显示出显然更好的电的性能。它有0.063厘米2/Vs,的地效果电子活动性1.7×1的开／关比率04和2.3V的阀值电压。

简介：Tetrahedralamorphoushydrogenatedcarbon(ta-C:H)filmsonSi(lO0)substrateswerepreparedbyusingamagnetic-field-filterplasmastreamdepositionsystem.Sampleswithdifferentratiosofsp^3-bondtosp^2-bondwereobtainedbychangingthebiasvoltageappliedtothesubstrates.Theellipsometricspectraofvariouscarbonfilmsinthephotonenergyrangeof1.9-5.4eVweremeasured.Therefractiveindexnandtherelativesp^3CratioofthesefilmswereobtainedbysimulatingtheirellipsometricspectrausingtheForouhi-BloomermodelandbyusingtheBruggemaneffectivemediumapproximation,respectively.Thehaemocompatibilityoftheseta-C:Hfilmswasanalysedbyobservationofplateletadhesionandmeasurementofkineticclottingtime.Theresultsshowthatthesp^3Cfractionisdependentonthesubstratebiasvoltage,andthehaemocompatibilityisdependentontheratioofsp^3-bondtosp^2-bond.Agoodhaemocompatibilitymaterialofta-C:Hfilmswithasuitablesp^3Cfractioncanbepreparedbychangingthesubstratebiasvoltage.

简介：<正>Accordingtopressreports,China’sfirstlongdistance,extra-highvoltagecableisexpectedtocrossQiongzhouStraitsbefore2006.

简介：介绍最佳被设计互补金属氧化物半导体活跃象素传感器。在这个传感器中，使用是作为恢复在传统的传感器中代替NMOSFET的PMOSFET晶体管。基于0.25m互补金属氧化物半导体技术与在一样下面的传统的活跃象素传感器相比调节，模仿新结构设备更高举办的结果表演signal-to-noise比率，更宽的输出秋千，更宽的动态范围和更快的读出加速。

简介：Themeasurementtheoremoffiberopticallydriveninstrumentforhigh-voltagelinecurrentispresented.ThePLLvoltage-frequency-narrowpulseprincipleanditsmicro-consumptionmechanismareproposed,followedbyanalysisonthetwomainfactorsaffectingPLLmeasurementprecision.Asoftwaredesignschemeusing80C196KBmicro-controllerisintroduced.Theexperimentresultissatisfactory.

简介：Developinganelectrostaticdischarge(ESD)protectiondevicewithabetterlatch-upimmunityhasbeenachallengingissueforthenanometercomplementarymetal-oxidesemiconductor(CMOS)technology.Inthiswork,animprovedgrounded-gateN-channelmetal-oxidesemiconductor(GGNMOS)transistortriggeredsilicon-controlledrectifier(SCR)structure,namedGGSCR,isproposedforhighholdingvoltageESDprotectionapplications.TheGGSCRdemonstratesadoublesnapbackbehaviorasaresultofprogressivetrigger-onoftheGGNMOSandSCR.Thedoublesnapbackmakestheholdingvoltageincreasefrom3.43Vto6.25Vascomparedwiththeconventionallow-voltageSCR.TheTCADsimulationsarecarriedouttoverifythemodesofoperationofthedevice.