简介:本文介绍3.1-4.8GHzMB-OFDM系统的CMOS射频收发器。电路采用直接变频架构,由接收器、发射器和频率综合器组成。采用PGS隔离技术和其他隔离措施完成了单片射频收发器的版图布局。后仿真结果表明,接收链路可提供的最大增益为72dB,其52dB为可变增益,三个子频带内噪声系数介于5.2-7.8dB,带外IIP3不低于-3.4dBm。发射链路可提供的可控输出功率-8dBm到-2dBm,输出1dB压缩点不低于4dBm,输出信号边带抑制约44dBc,载波抑制不低于34dBc。频率综合器在三个频点间的跳变时间小于9ns。芯片采用Jazz0.18μm射频CMOS工艺设计,面积为6.1mm2。在1.8V电源电压下,总电流约221mA。
简介:Lowpoweraddercircuits,SERF,10T-Ⅰ,10T-Ⅱ,10T-Ⅲandacomplementaryadder(28T)atphysicallayoutlevelareevaluated.Simulationsbasedontheextractedaddercircuitlayoutsareruntoassesshowvariouscircuitsetupscanimpactthespeedandpowerconsumption.Inaddition,impactsofoutputinvertersonthecircuitperformanceofmodifiedSERFand10Taddersduetothresholdlossproblemarealsoexamined.Differencesamongtheseaddersareaddressedandapplicationsoftheseaddersaresuggested.
简介:Thispaperoptimizestheburiedchannelcharge-coupleddevice(BCCD)structurefabricatedbycomplementarymetaloxidesemiconductor(CMOS)technology.TheoptimizedBCCDhasadvantagesoflownoise,highintegrationandhighimagequality.Thechargetransferprocessshowsthatinterfacetraps,weakfringingfieldsandpotentialwellbetweenadjacentgatesallcausethedecreaseofchargetransferefficiency(CTE).CTEandwellcapacityaresimulatedwithdifferentoperatingvoltagesandgapsizes.CTEcanachieve99.999%andthewellcapacityreachesupto25000electronsforthegapsizeof130nmandthemaximumoperatingvoltageof3V.
简介:ToovercomethelimitationoflowimagesignalswingrangeandlongresettimeinfourtransistorCMOSactivepixelimagesensor,achargepumpcircuitispresentedtoimprovethepixelresetperformance.Thechargepumpcircuitconsistsoftwostageswitchcapacitorserialvoltagedoubler.Cross-coupledMOSFETswitchstructurewithwellcloseandopenperformanceisusedinthesecondstageofthechargepump.Thepixelresettransistorwithgatevoltagedrivenbyoutputofthepumpworksinlinearregion,whichcanaccelerateresetprocessandcompleteresetisachieved.Thesimulationresultsshowthatoutputofthechargepumpisenhancedfrom1.2to4.2Vwithvoltageripplelowerthan6mV.Thepixelresettimeisreducedto1.14nsindark.Imagesmearduetonon-completelyresetiseliminatedandtheimagesignalswingrangeisenlarged.ThechargepumpissuccessfullyembeddedinaCMOSimagesensorchipwith0.3×106pixels.