简介：Thefullpotentiallinearizedaugmentedplanewave(FLAPW)methodisusedtostudythecrystalstructureandelectronicstructurepropertiesofPbFeo.5Nbo.5O3(PFN).Theoptimizedcrystalstructure,densityofstates,bandstructureandelectrondensitydistributionhavebeenobtainedtounderstandtheferroelectricbehaviourofPFN.TheanalysisresultofthedensityofstatesshowsthereisanobviouschangeofNbdstatesintheparaelectric-to-ferroelectricphasetransition.ThepolarizationresultshowsthatthecontributiontoferroelectricityofNbatomsislargerthanthatofFeatoms.InferroelectricphasethereisahybridizationofFed-OpandNbd-OpinferroelectricPFN.Thisisconsistentwiththeresultoftheelectronicbandstructure.Thishybridizationisresponsibleforthetendencytoitsferroelectricity.
简介：<正>Foranoddfunctionf(x)definedonlyonafiniteinterval,thispaperdealswiththeexistenceofperiodicsolutionsandthenumberofsimpleperiodicsolutionsofthedifferentialdelayequation(DDE)(?)(t)=-f(x(t-1)).Byuseofthemethodofqualitativeanalysiscombinedwiththeconstructingofspecialsolutionsaseriesofinterestingresultsareobtainedontheseproblems.
简介：Theoneplusone(1+1)modeofhydrosilationreactionofladderlikecis-isotaticpolyallylsilsesquioxane(AllyI-T)andpolyhydrosilsesquioxane(H-T)usingdicyclopentadienylplatinumdichloride(Cp2PtCl2)asthecatalystleadstotheformationofanewpolyorganosiloxane(POS).ThepresenceofnanoscaletubularstructureintheproductPOSwaspreliminarilyprovedbyIR,1H-NMR,differentialscanningcalorimetry(DSC),X-raydiffraction(XRD),gelpermeationchromatography(GPC),atomicforcemicroscopy(AFM)andmolecularsimulation.
简介：UsingthemethodofGirsanovtransformation,weestablishtheTalagrand'sT2-inequalityfordiffusiononthepathspaceC([0,N],R^d)withrespecttoauniformmetric,withtheconstantindependentofN.ThisimprovestheknownresultsfortheL2-metric.
简介：Theglassytransitionofthepolyethyleneterephthalate(PET)sampleswhichhavebeensubjectedtosolventinducedcrystallization(SINC)wasinvestigatedbymodulateddifferentialscanningcalorimetry(MDSC)anddensitymeasurement.Thedif-ferentialofheatcapacitysignal,dC_p/dTfromMDSC,wasusedtomonitortheSINCprocess.ItrevealsthattheT_gtemperatureshiftstohighervaluewiththeadvancementofSINC.Whenthetoluene-immersingtimewaslonger(168h),thedetectionofT_gbecomemoredifficult,becausesomesmallerpeaksemergedatthelowertemperaturesandtheseareexplainedasthemovementofsmallsegmentsintheamorphousregion.TheseobservedresultsareduetothemorphologyandstructureintroducedbytheSINCprocess.
简介：探讨用等离子体喷涂方法制备降低较高强度材料与U-Nb合金之间的摩擦性能的减磨层的可行性以及这些减磨层的摩擦特性。选用Sn为软涂层，ZrO2为硬涂层。采用SulzerMETCO9M等离子体喷涂机制备了Sn单层、ZrO2单层、Sn／ZrO2双层、Sn+ZrO2混合层等4种涂层。利用CSEM型销盘型摩擦磨损试验机分析了半径为3mm的U-Nb合金对偶销在涂层上滑动时的干摩擦特性，滑动速度分别为0．42，6．4，26．16cm／s。涂层为典型的等离子体喷涂涂层形貌。表面为Sn的涂层颗粒熔合状况和致密性比ZrO2单层好，其粗糙度低，Sn+ZrO2混合涂层表面形貌与ZrO2单层相近。Sn和ZrO2分别以bcc结构的Sn和四方结构ZrO2结构存在。
简介：Thetheta(t)-typeoscillatorysingularintegraloperatorshasbeendiscussed.Withthenon-negativelocallyintegrableweightedfunction,theweightednorminequalityoftheta(t)-typeoscillatorysingularintegraloperatorsisproved,andtheweightedfunctionhasreplacedbyactionofHardy-Littlewoodmaximaloperatorsseveraltimes.
简介：本文利用等价方程组，友矩阵与Jordan标准型，研究了n阶常系数线性非齐次常微分方程P（D）x=acose^t+bsine^t其中P（D）=D^n+a1D^n-1+…+an,D=1/dt,a1,a2,…a,a,b为任意实常数，在友矩阵具有n个不同的特征根的条件下，给出了求上述方程的特解的方法，最后给出一个详细的实例。
简介：本文介绍由三片集成块ＣＳ８２０４、ＷＥ９１４０Ａ、ＴＥＡ１０６１组成的典型电话机电路，主要分析电话机的电源供给电路、振铃电路、拨号电路和通话电路。
简介：ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.
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