简介:Aneworganicsemiconductortartaricaciddopedsaltofemeraldinepolyaniline(PANI-C4H6O6)hasbeenobtainedbythemethodofoxidativepolymerizationofmonomericanilinewithammoniumpersulfateinacidicsolution.ThestructurewascharacterizedbyFourierTransformInfraredtechnique(FTIR)andX-raydiffraction(XRD).Thetemperaturedependencedcconductivityδdc(T)showsasemiconductorbehaviorandfollowsthequasionedimensionalvariablerangehopping(Q1D-VRH)model.Dataonδdc(T)arealsodiscussed.
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.
简介:作者勃勃赵赵名人访谈努力促进中国电子封装事业繁荣发展快速反应、真诚务实是华天发展的法宝期(页)五(1)六(1)专家论坛电子封装技术的新进展新型微电子封装技术知识经济下的管理变革与创新NewICPaekage,assemblytechniquebymeansofa“blind”Alignment“fliP一ehiP”methodandassemblingfaeilities张蜀平高尚通文」逸明郑宏宇杨克武钱枫林VladimirV.Novikov一(3)一(10)三(1)四(1)Top企业报道瑞萨;加强中国市场的整体统一管理战略瑞萨的Slp(Solution
简介:Becauseofrapiddevelopmentinnetworktechnology,Internetusagehasbecomewidespread.Itallowsuserswithsensingdevicestoobtainmedicaldataforhealthcare,suchasphysiologicalsignals,voice,andvideostreamsfromtelemedicinesystems,andtosendthehealthcaredatatoback-enddatabasesystems,creatingaubiquitoushealthcareenvironment.However,thisenvironmentrequiresawidespreadandsuitablenetwork.IPv6(Internetprotocolversion6)isthenext-generationInternetprotocolthatwillbetheprotocoloffuturenetworks;itimprovesmanyshortcomingsofIPv4.Inthispaper,weproposeanIPv6/IPv4U-home-caretestsystemandanalyzethenetwork’sparametersthoughaseriesoftestsbyadjustingnetworkparameterstofindtheoptimaldesignforapplicationsintheIPv6/IPv4U-home-careservicesoastoassuregoodperformanceandhighquality.
简介:Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.
简介:Theoperationprincipleofanarrayedwaveguidegrating(AWG)multiplexerisintroducedandthe4×4AWGwithfollowingdesignparametersisdiscussedindetail,suchasthechoiceofwavelength,theneighboringarrayedwaveguidedistanceΔL,thechannelfrequencyintervalΔf,andthefreespectralrange.Thestructureof4×4AWGisdesignedandtheresultofstimulatedtestisalsogiven.Analysisshowsthatthe4×4AWGischaracterizedbyawidedynamicrange,lowcrosstalk,betterspectrumproperties,andacompactstructure.