简介:Atemperaturesensorbasedonpolarizationnon-reciprocity(PNR)infiber-opticSagnacinterferometer(FSI)wasproposed.Theexperimentalstudywasmadeprimarilyandtheresultsagreewiththeorywell.Discussionshowsthatthiskindoftemperaturesensorcanachievehighprecisionandhavegreatapplicationpotential.
简介:Thetime-of-flightmassspectrum(TOFMS)relativetotheresonanttwo-photonionizationofgasphasep-dichlorobenzenewasobtainedinthewavelengthrangeof240-250nmbyahome-madesystem.Aspecialdesignwasmadetoreducetheeffectofmemoryontheinnerwallofthesampleinletsystemsuitablefortheinvestigationofsemi-volatileorganiccompound.Inthiswavelengthrange,p-dichlorobenzenemoleculesfirstlyabsorbedonephotontobeexcitedfromthegToundstate~1A_g(S_0)tothefirstexcitedstate1B2u($1),thenabsorbedanotherphotontobeionized.Therelationshipbetweenthesignalintensityofp-dichlorobenzenemolecularionC_6H_4~(35)Cl_2~+at248-nmwavelengthandthelaserpowerwasgiven.The1.52powerindexofC_6H_4~(35)Cl_2~+wasatypicalidentificationofthe3/2powerlaw.TherelationshipbetweentheionsignalintensityofC_6H_4~(35)Cl_2~+andthesampleconcentrationwasclosetoalinearoneintheppm(V/V)range,whichledtoadetectionlimitof125ppb(V/V)forp-dichlorobenzene.
简介:通过分析F-P扫描干涉仪的工作原理,基于STC89C52RC单片机,采用PA93功率放大器驱动压电陶瓷,设计了1064nm平平腔结构的F-P扫描干涉仪。腔镜反射率为98%,精细度156,腔长0.1~100mm连续可调,对应自由光谱区1.5~1500GHz和分辨率9.65~9650MHz。压电陶瓷驱动电压和频率通过4×4矩阵键盘,可以在0~200V和1~30Hz连续可调,显示在1602液晶屏上。同时可以通过RS232串口与计算机通讯,在上位机使用LabVIEW软件界面方便地设置压电陶瓷驱动电压和频率。最后使用该F-P扫描干涉仪,对激光二极管泵浦Nd:YVO4激光器纵模进行了测量,验证了整个系统的工作性能。
简介:Byusingagraded-indexmultimodefiber(GI-MMF)witharelativelyflatindexprofileandhighrefractiveindexofthefibercore,amicroextrinsicfiber-opticFabryProtinterferometric(MEFPI)strainsensorisfabricatedthroughchemicaletchingandfusionsplicing.Higherreflectanceofthemicrocavityisobtainedduetotheless-curvedinnerwallinthecenterofthefibercoreafteretchingandhigherindexcontrastbetweentheGI-MMFcoreandair.Themaximumreflectionofthesensorisenhanced12dBthanthatobtainedbyetchingoftheEr-orB-dopedfibers.Highfringecontrastof22dBisobtained.ThestrainandtemperatureresponsesoftheMEFPIsensorsareinvestigatedinthisexperiment.Goodlinearityandhighsensitivityareachieved,withwavelength-strainandwavelength-temperaturesensitivitiesof7.82pm/μεand5.01pm/°C,respectively.
简介:Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.
简介:WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.
简介:Asecondgenerationsolaradaptiveoptics(AO)systemisbuiltandinstalledatthe1-mNewVacuumSolarTelescope(NVST)oftheFuxianSolarObservatory(FSO)in2015.TheAOhigh-ordercorrectionsystemconsistsofa151-elementdeformablemirror(DM),acorrelatingShack–Hartmann(SH)wavefrontsensor(WFS)witha3500Hzframerate,andareal-timecontroller.ThesystemsawfirstlightonMar.16,2015.Thesimultaneoushigh-resolutionphotosphereandchromosphereimageswithAOareobtained.Theon-skyobservationalresultsshowthatthecontrastandresolutionoftheimagesareapparentlyimprovedafterthewavefrontcorrectionbyAO.
简介:Anall-fiberopticallaserpulsemulti-passstretcherusingachirpedfiberBragggrating(CFBG)isdemonstrated.Pulsesfroma1053-nmmode-lockedfiberseedoscillatorarestretchedbymultiplepassingthroughachirpedfibergratingsetinafiberregenerativeamplifierstructure.Westretchthepulsefrom16psto1.855nsafterittransmitssevenloopsinthestretcher.Themainfactorsthataffectthestretchingresultsarediscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.