简介:TherelationshipbetweenCharpyabsorbedenergyandthefracturetoughnessbymeansofthe(cracktipopeningdisplacement(CTOD))methodwasanalyzedbasedontheWeibullstresscriterion.TheCharpyabsorbedenergyandthefracturetoughnessweremeasuredfortheSN490Bsteelundertheductile-brittletransitiontemperatureregion.FortheinstrumentedCharpyimpacttest,thecurvesbetweentheloadingpointdisplacementandtheloadagainsttimewererecorded.ThecriticalWeibullstresswastakenasafracturecontrolledparameter,anditcouldnotbeaffectedbythespecimenconfigurationandtheloadingpatternbasedonthelocalapproach.TheparameterscontrolledbrittlefractureareobtainedfromtheCharpyabsorbedenergyresults,thenthefracturetoughnessforthecompacttension(CT)specimenispredicted.Itisfoundthattheresultspredictedareingoodagreementwiththeexperimental.ThefracturetoughnesscouldbeevaluatedbytheCharpyabsorbedenergy,becausethelocalapproachgivesagooddescriptionforthebrittlefractureeventhoughtheCharpyimpactspecimenortheCTspecimenisusedforthegivenmaterial.
简介:Theaccuracyofnumericalsimulationsandmanyothermaterialdesigncalculations,suchastherollingforce,rollingtorque,etc.,dependsonthedescriptionofstress-strainrelationshipofthedeformedmaterials.Onecommonmethodofdescribingthestress-strainrelationshipisusingconstitutiveequations,withtheunknownparametersfittedbyexperimentaldataobtainedviaplanestraincompression(PSC).DuetothehighlynonlinearbehaviouroftheconstitutiveequationsandthenoiseincludedinthePSCdata,determinationofthemodelparametersisdifficult.Inthispaper,geneticalgorithmswereexploitedtooptimiseparametersfortheconstitutiveequationsbasedonthePSCdata.TheoriginalPSCdatawereprocessedtogeneratethestress-straindata,anddatapre-processingwascarriedouttoremovethenoisecontainedintheoriginalPSCdata.Severalgeneticoptimisationschemeshavebeeninvestigated,withdifferentcodingschemesanddifferentgeneticoperatorsforselection,crossoverandmutation.Itwasfoundthattherealvaluecodedgeneticalgorithmsconvergedmuchfasterandweremoreefficientfortheparameteroptimisationproblem.
简介:Theformationandevolutionofdeformationtextureinpolycrystallinematerialsarestudiedbyphase-fielddynamicmodel.Inaddition,thedrivingforceoftextureevolutionisalsodiscussed.Inthismodel,grainswithdifferentorientationaredefinedbyasetofcontinuousnon-conservedorderparameterfields.Simulationresultsshowthatgrainswithpreferredorientationgrowattheexpenseofthosewithunfavorableorientations.Itismoreimportantthat,elasticpotentialratherthanelasticenergyplaysacrucialroleintheevolutionoftexturewhetherthepolycrystallinesystemissubjectedtouniaxialstressorshearstress.
简介:ThispaperpresentsanexperimentalinvestigationonanAISI316Lstainlesssteelregardingmechanicalproper-tiesandshortuniaxialcreeptestsatelevatedtemperatures.Theshorttimecreeptestswerecarriedoutunderdifferentbutconstantstresses.Theobtaineddataofultimatetensilestrength,yieldstrength,creepcurvesandeffectsofelevatedtemperaturesonmechanicalpropertieswerepresented.Foraselectedrheologicalmodel,materialparameterswereobtained.Asajustification,suchrheologicalmodelisimplementedinthefiniteelementprocedureforanuniaxiallystressedspecimeninselectedenvironmentalconditions.
简介:Thesystematiclaboratorystudiesontherolesofsulfate-reducingbacteria(SRB)inthestresscorrosioncracking(SCC)susceptibilityofX80steelsubjectedtocathodicpotentialhavebeenconductedinanearneutralpHsoilsolutionbyslowstrainratetests.ThecathodicpotentialandSRBincreaseindividuallytheSCCsusceptibilityofthesteelinthesoilsolution.ThepositiveroleoftheSRBactivitiesinSCCsusceptibilitydependsontheprolongationofpre-incubationtime,andtheSCCsusceptibilityofthesteelincreasesundermorenegativepotentials.What’smore,theappliedpotentialsandthepresenceofSRBworktogetherinpromotingtheSCCsusceptibilityofthesteel.But,thecombinedactionbecomeslimitedwithdecreasingcathodicpotentials.Therelationshipsbetweentheplasticitylossandthepermeablehydrogenconcentrationwereestablishedforthesteelinthesoilsolution,regardlessofunderopencircuitpotentialorcathodicpotentials,inboththesterileandSRBinoculatedconditions.Therelationshipsarepracticallysignificantfortheselectionofsafecathodicprotection(CP)potentialsinthepresenceofSRBinsoilenvironment.
简介:在各种各样的应力下面的316L不锈钢(316LSS)的Pitting腐蚀被potentiodynamic学习在3.5%NaCl答案的极化,电气化学的阻抗光谱学(EIS)和Mott-Schottky(MS)分析。极化曲线的结果证明随压力的增加,pitting潜力和被动当前的密度显著地减少firstly(180MPa),然后极大地增加(200MPa)。在极化测试以后的样品的相应表面形态学很好对应于结果。Mott-Schottky分析证明了在潜力与更积极的fl吸附到被动film的表面的最少的Cl,显示一个中等压力能增加在3.5%NaCl答案的316LSS的pitting腐蚀电阻。
简介:连续冷却的用法在数字焊接的转变(CCT)图模拟现状。不过,说明在分别地导致不同CCT行为和CCT图的材料的化学作文提供限制。因此,在发展中的剩余压力上在CCT图分析变化的影响是必要的。在现在的纸,在剩余压力的数字计算以后的四张CCT图和他们的效果为煤气的金属弧焊(GMAW)焊接的广泛地使用的结构的钢S355J2+N被调查过程。而非执行CCT行为的任意的调整,四个有理由的数据集合被用作输入到数字计算:在Sysweld数据库,通过Gleebledilatometry测试获得的试验性的数据,和TTT/CCT预言可得到的数据从JMatPro和爱迪生焊接研究所(EWI)计算了虚拟加入门软件。执行数字分析就不同CCT图而言在剩余压力导致了显著偏差。而且,改进失真和剩余的预言的可能性基于CCT强调行为被讨论。
简介:被动导致电影的压力和危险性在在各种各样的pH价值的3.5%钠氯化物答案的7050铝合金的SCC被慢紧张率测试调查(SSRT)并且流动应力微分方法。结果证明到SCC的被动导致电影的压力和危险性与增加pH减少了价值什么时候pH7,当他们与增加pH增加了时价值什么时候pH>7。然而,当,腐蚀类型被解释脱落腐蚀什么时候pH=1并且14,并且没有电影,在标本的表面上形成。整个变化与pH导致电影的应力和SCC危险性阴谋当,价值两个都被介绍山谷形状。导致电影的压力的标志和数量与被动电影的作文有关,它用X光检查光电子被分析光谱学(XPS)。
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简介:ConstantloadtestsinNS4solutionpurgedwithN2-5%CO2gasmixturewereconductedonAmericanPetroleumInstitute(API)X80pipelinesteelappliedinthe2ndWest-EastGasPipelineprojectwithandwithoutpreload.TheresultsshowthatcrackscouldinitiateandpropagateinX80pipelinesteelinnear-neutralpHenvironmentunderaconstantloadcondition.Thelifeofcrackinitiationandpropagationincreasedwithdecreasingappliedstress.Preloaddidnotchangeitscorrosionbehaviorobviously.However,preloadreducedthetimeforcrackinitiation.
简介:Intrinsiccarrierconcentration(ni)isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband(NcandNv)at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction(x)at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi(001)andSi1-xGex(001)and(101)materialsat300KincreasessignificantlywithincreasingGefraction(x),whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.