Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer

(整期优先)网络出版时间:2003-01-11
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ThepurecubicGaN(c-GaN)hasbeengrownon(001)GaAssubstratesbyECR-PAMOCVDtechniqueatlowtemperatureusingTMGaandhighpureN2asGaandNsources,respectively.TheeffectsofsubstratepretreatmentconditionsonqualityofcubicGaNepilayerareinvestigatedbythemeasurementsofTEMandXRD.Itisfoundthathydrogenplasmacleaning,nitridationandbufferlayergrowthareveryimportantforqualityofcubicGaNepilayer.