Implant Compositional Disordering on InGaAs/InP MQW Structures

(整期优先)网络出版时间:1996-01-11
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SomenewresultsofimplantdisorderingonInPbasedMQWstructuresbyim-plantedcompositionaldisorderingarepresented.TheenergyshiftofPLpeakdependsonionspecies,iondose,annealingconditionsandtargettemperature,TheresultsindicatethatthenonactiveionssuchasF^+andNe^+arethebestcandiatesforIICD,theiondosewhichcausedbiggestblueshiftisaround1×10^14cm^-2forroomtemperatureimplantationand5×10^14cm^-2foranelevatedimplantedtemperatureof200℃andtheoptimumannealingconditionisapproximately750℃for30s.AESandTEMcharacterizationsuggeststhationbombardmentbynonelectricallyactiveionssuchasF^+,Ne^+inducedsameamountoflayerinterdiffusionwhichresultsinthebandgapblueshiftduetothecompositionalchanges.