Bydepositingdiamondlikecarbon(DLC)filmwithradiofrequencyplasmachemicalvapordeposition(RFPCVD)method,anewsurfacepassivationtechniqueforphotoluminescenceporoussilicon(PS)hasbeenstudied.ThesurfacemicrostructureandphotoelectricpropertiesofbothporoussiliconandDLCcoatedPShavebeenanalyzedbyusingAFM,FTIRandPLspectrometers.TheresultsshowtheDLCfilmwithdenseandhomogenousnanometergrainscanbedepositedonthePSusedaspassivationcoatingasitcanterminateoxidereactiononthesurfaceofthePS.Furthermore,certainratioofhydrogenexistedintheDLCfilmcanbeimprovedtoformhydridespeciesontheDLC/PSinterfaceasthecentersoftheluminescencesothattheDLCcoatingisofbenefitnotonlytothepassivationofthePSbutalsototheimprovementofitsluminescentintensity.
