128×128 element PtSi infrared CCD image sensor

(整期优先)网络出版时间:1995-01-11
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Anew128×128elementPtSiSchottkybarrierinfraredimagesen-sorwithITCCDreadortstructureandPtSithinfilmopticalcavitydetectorstruc-turehasbeenfabricated,whichhas50цm×50цmpixels,afillfactorof40per-cent,thenonuniformityof5%orlessandthedynamicrangeofoverorequalto50dB.Thenoiseequivalenttemperaturedifferenceis0.2Kwithf/1.0opticsat300Kbackground.Inthispaper,theprincipleofoperation,designconsiderationandfabric-cationtechnologyforthedevicearedescribed.