New type X—ray mask fabricated using inductvely coupled plasma deepetching-中国期刊网

摘要 ThefabricationofX-raymasksisacriticalandchallengingprocessinLIGAtechnique.Asinductivelycoupledplasma(ICP)deepetchingappearstobethemostsuitablesourcefordeepsiliconetching,wefabricatedanewtypeX-raymaskusingthistechnique.IncomparisonwithothertypesofX-raymasks,themaskwefabricatedhastheadvantagesofitslowcostanditssimplefabricationprocess.BesiredmicrostructureshavealsobeenfabricatedusingthisnewtypeX-raymaskinLIGAtechnique.

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New type X—ray mask fabricated using inductvely coupled plasma deepetching

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New type X—ray mask fabricated using inductvely coupled plasma deepetching

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