简介:ThinheavilyMg-dopedInGaNandGaNcompoundcontactlayerisusedtoformNi/AuOhmiccontacttop-GaN.ThegrowthconditionsofthecompoundcontactlayeranditseffectontheperformanceofNi/AuOhmiccontacttop-GaNareinvestigated.Itisconfirmedthatthespecificcontactresistivitycanbelowerednearlytwoordersbyoptimizingthegrowthconditionsofcompoundcontactlayer.WhentheflowrateratiobetweenMgandGagassourcesofp++-InGaNlayeris10.6%andthethicknessofp++-InGaNlayeris3nm,thelowestspecificcontactresistivityof3.98×10-5?·cm2isachieved.Inaddition,theexperimentalresultsindicatethatthespecificcontactresistivitycanbefurtherloweredto1.07×10-7?·cm2byoptimizingthealloyingannealingtemperatureto520℃.
简介:FK01isanewstrainofoil-sunflowerwithcytoplasmicmalesterilelineHAasfemaleparentandcytoplasmicmalesterilerestorerline19540asmaleparent.19540isamutantirradiatedbycarbonionwhichseedoilcontentincreases.FK01joined2014Gansuprovinceregionaltestofoil-sunflowerandplantedinsixsites:Jingyuanagriculturaltechniquespreadingcenter,Minqinagriculturaltechniquespreadingcenter,Jingtaiagriculturaltechniquespreadingcenter,Jiuquanagriculturalsciencesresearchinstitute,Tianshuiagriculturalsciencesresearchinstitute,andHuanxianseedcontrolstation.