简介：Reducingthemanufacturingcostofsolarcellsisnecessarytotheirindustrialproduction.Electrodepositingisaneffective,non-vacuummethodwhichisverysuitableforcuttingthemanufacturingcostofthinfilmsaswellasdevelopingitslarge-scaleindustrialproduction.Inthisstudy,about1-μm-thickCu(In,Ga)Se_2(CIGS)precursorswereelectrodepositedonMo/glasssubstratesinaqueoussolutionutilizingathree-electrodepotentiostaticsystem.Triethanolaminewasusedascomplexingagent,andallparametersofelectrodepositionwerepreciselycontrolled.Afterthat,theelectrodepositedprecursorswereselenizedinaSeatmospherewithdifferentheatingramprates(60and600℃·min~(-1)).High-qualityCIGSfilmswereobtained,andtheircharacteristicswereinvestigatedbyX-rayfluorescence,scanningelectronmicroscopy,energydispersivespectroscopy,X-raydiffraction,Ramanspectraandnear-infrared-visible(NIR-Vis)spectra.Theresultsrevealthattherearemanydifferencesbetweenthepropertiesofthefilmsunderdifferentheatingrates.Finally,CIGSsolarcellswerefabricatedusingafastandaslowheatingrate.Themaximumefficienciesachievedforthefilmsselenizedat60and600℃-min~(-1)are3.15%and0.71%,respectively.

简介：Inthiswork,asimpleandfacileone-potoleylaminesolvothermalsyntheticmethodwasdevelopedtosynthesizeCu_2ZnSnS_4(CZTS)nanocrystals.AndtheCu_2ZnSn(S,Se)_4(CZTSSe)thinfilmswerepreparedbyselenizingCZTSnanocrystals.TheobtainedCZTSnanocrystalsandCZTSSefilmswerestudiedusingX-raydiffraction(XRD),transmissionelectronmicroscopy(TEM),scanningelectronmicroscopy(SEM),energy-dispersiveX-rayspectroscopy(EDX),andultraviolet–visiblespectrophotometer(UV–Vis).TEMresultsshowthatthesphere–likeCZTSnanoparticleswithdiameterbetween12and35nmarepolydispersed.XRDstudiesindicatethatthepreparedCZTSnanocrystalsformkesteritecrystalstructure,andtheCZTSSefilmswithkesteritecrystalstructurearealsoobtainedattheannealingtemperaturesof500and550°C.Inparticularafterannealingat500°Cfor20min,theCZTSSefilmexhibitsasmooth,uniform,crack-free,andlarge-grainedtopographyandpossessesCu-poorandSn-richcomposition.Moreover,itshowsstrongopticalabsorptionfromvisibletonear-infrared(IR)region,anditsopticalbandgap(Eg)isfoundtobeabout1.44eV.