简介:Asimplifiedthree-dimension(3D)fadingchannelmodeldeployedinamulti-inputmulti-output(MIMO)beamformingsystemisexploredinthisarticle.Bothangleofarrival(AoA)andangleofdeparture(AoD)whichimpacttheoverallsystemperformanceareexamined.Thenumericalresultsaregivenforvalidatingtheaccuracyofthetheoreticalderivedformulas.Furthermore,theperformancesofthemodelwithdifferentnumberoftransmittersandreceiversarestudiedandcompared.TheincrementinAoAparametersdefinitelygeneratestheimpactofthesystemperformancewhentheconsiderationofsimplified3Dchannels.
简介:Thetemperaturedependenceofcharacteristicsformultimodeinterference(MMI)based3-dBcouplerinsilicon-on-insulatorisanalyzed,whichoriginatesfromtherelativelyhighthermo-opticcoefficientofsilicon.Forrestrictedinterference3-dBMMIcoupler,theoutputpoweruniformityisideally0atroomtemperatureandbecomes0.32dBwhentemperaturerisesupto550K.Forsymmetricinterference3-dBMMIcoupler,thepoweruniformitykeepsideally0duetoitsintrinsicsymmetricinterferencemechanism.Withthetemperaturerising,theexcesslossofthebothdevicesincreases.TheperformancedeteriorationduetotemperaturevarietyismoreobvioustorestrictedinterferenceMMI3-dBcoupler,comparingwiththatofsymmetricinterferenceMMI3-dBcoupler.
简介:Thedielectricpropertiesofceramicswithcompositionof(Sr1-xBix)TiO3+x/2(wherex=0.05~0.70)weremeasuredatfrequencyof1MHz.Theexperimentalresultsindicatethatthedielectricpropertiesof(Sr1-xBix)TiO3+x/2systemaregreatlyvariedwithanincreaseofthestoichiometricamountsofBi2O3.Therelativepermittivityofthesolidsolutionsishigh,andthedissipationfactorislow.Thepositronannihilationtechnique(PAT)wasadoptedtostudythedefectstructure.AnexplanationofthedielectricpropertiesofBi-dopedSrTiO3ceramicshasbeensuggestedintermsofelectron-compensationandvacancyordefect-compensationmechanismsandspace-chargepolarizationmechanism.
简介:Organicmultiplequantumwell(OMQW)structuresconsistingofalternatinglayersoftris(8-quinolinolato)aluminum(Ⅲ)(Alq3)an2-(4-biphenylyl)-5-(4-ter-butylphenyl)-(1,3,3-oxadiazole)(PBD)havebeenfabricatedbyorganicmolecularbeamdeposition(OMBD).Theindividuallayerthicknessinthemultilayersampleswasvariedfrom6nmtp20nm.ThemultiplequantumwellstructuresweredeterminedbylowangleX-raydiffraction,opticalabsorptionandphotoluminescence(PL).ThePLspectranarrowandtheemissionenergyhasbeenobservedtoshifttohigherenergycomparedwiththatinthemonolayerstructure,suggestingaquantumsizeeffect.
简介:Awhole-field3Dsurfacemeasurementsystemforsemiconductorwaferinspectionisdescribed.Thesystemconsistsofanopticalfiberplate,whichcansplitthelightbeamintoN2subbeamstorealizethewhole-fieldinspection.Aspecialprismisusedtoseparatetheilluminationlightandsignallight.Thissetupischaracterizedbyhighprecision,highspeedandsimplestructure.