简介:WhenfemtosecondlaserpulsesinterferewithchirpedfemtosecondlaserpulsesinAs2S3fiber,achirpedfibergratingisformed.Ananalyticalexpressionisgiventodescribethechirpedgrating,anditsBraggreflectivityiscalculated.BecauseofthehighphotosensitiveeffectofAs2S3material,thechirpedfibergratinghasawideBraggreflectivespectrumandhighreflectivitybychoosingproperparameters.Thisindicatesthatthechirpedfibergratingcanbeusedasastretcherinthefemtosecondchirpedpulseamplification(CPA)system.
简介:Thecombinationofdeepwetetchingandamagneto-rheologicalfinishing(MRF)processisinvestigatedtosimultaneouslyimprovelaserdamageresistanceofafused-silicasurfaceat355nm.ThesubsequentlydepositedSiO2coatingsareresearchedtoclarifytheimpactofsubstratefinishingtechnologyonthecoatings.Itisrevealedthatadeepremovalproceedingfromthesinglesideordoublesidehadasignificantimpactonthelaser-induceddamagethreshold(LIDT)ofthefusedsilica,especiallyfortherearsurface.Afterthedeepetching,theMRFprocessthatfolloweddoesnotactuallyincreasetheLIDT,butitdoesamelioratethesurfacequalitieswithoutadditionalLIDTdegradation.Thecombinationguaranteeboththeintegrityofthesurface’sfinishandthelaserdamageresistanceofthefusedsilicaandsubsequentSiO2coatings.
简介:TheCa_2SiO_4:Dy~(3+)phosphorwassynthesizedbythehightemperaturesolid-statereactionmethodinair.TheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorshowsseveralbandsat486,575,and665nmunderthe365-nmexcitation.TheeffectsofLi~+,Na~+,andK~+ontheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorwerestudied,TheresultsshowthattheemissionspectrumintensityisgreatlyinfluencedbyLi~+,Na~+,andK~+.Thechargecompensationconcentrationcorrespondingtothemaximumemissionintensityisdifferentwithdifferentchargecompensations.
简介:Aperiodicallypoledlithiumniobate(PPLN)opticalparametricgenerator(OPG)pumpedbyalaserdiode(LD)-pumpedQ-switchedTm,Ho:GdVO_4laseroperatedat2.048μmwithpumppulseof25nsandrepetitionrateof10kHzisreported.Acontinuoustunablemiddle-infrared(mid-IR)spectrumof3.88-4.34μmisobtainedbychangingthecrystaltemperaturefrom50to124°C.Whentheincidentpumppoweris3W,thetotalOPGoutputpoweris95mW,correspondingtoopticalconversionefficiencyof3.2%.
简介:EnhancementoflightextractioninaGaInNlight-emittingdiode(LED)employinganomni-directionalreflector(ODR)consistingofGaN,SnO_2nanorodandanAglayerwaspresented.TheODRcomprisesatransparent,quarterwavelayerofSnO_2nanorodcladedbysilverandservesasanohmiccontacttop-typeGaN.TransparentSnO_2solswereobtainedbysol-gelmethodfromSnCl_2·2H_2O,andSnO_2thinfilmswerepreparedbydip-coatingtechnique.TheaveragesizeofthesphericalSnO_2particlesobtainedis200nm.TherefractiveindexofthenanorodSnO_2filmlayeris2.01.TheGaInNLEDswithGaN/SnO_2/AgODRshowalowerforwardvoltage.ThiswasattributedtotheenhancedreflectivityoftheODRthatemploysthenanorodSnO_2filmlayer.ExperimentalresultsshowthatODR-LEDshaveloweropticallossesandhigherextractionefficiencyascomparedtoconventionalLEDswithNi/AucontactsandconventionalLEDsemployingadistributedBraggreflector(DBR).
简介:AhighlyTm-dopedleadgermanateglassfiberisdevelopedusingtherod-in-tubemethod.The~2μmlaserbeamqualityofthefiberis~1.5.Theleadgermanatecompositefiberjumpersarehomemadeforallthefiberlaserinvestigations.Whencoreispumpedbya1590nmYb/Erfiberlaser,amaximumlaseroutputof313mWisachievedata670mWpumppower,andthecorrespondingslopeefficiencyis~52.8%.Moreover,byusinga2cmlongleadgermanatefiberasthegainmedium,a33mW1942nmTmlaserisalsodemonstrated.
简介:Anultra-broadbandandfabrication-tolerantsiliconpolarizationrotatorsplitterisproposedinthisLetter.Benefittingfromthebroadbandandlow-losscharacteristicsofthebi-leveltaperandcounter-taperedcoupler,thedesigneddevicehasasimulatedinsertionlossandcrosstalkoflessthan0.2and-15dBinthewavebandfrom1290to1610nm.Thesecharacteristicsmakeitvaluableinapplicationswithlargebandwidthrequirements,suchasfull-gridCoarsewavelengthdivisionmultiplexer(CWDM)anddiplexer/triplexerfiber-to-the-homesystems.Thefabricationtoleranceofthedesignisalsoanalyzed,showingthatthedeviceperformanceisquitestablewithnormalmanufacturingerrorsinsiliconphotonicsfoundries.
简介:AseriesofAlx-(Alq3)1-xgranularfilmsispreparedonSiwaferwithnativeoxidelayerusingco-evaporationtechnique.Largelateralphotovoltaiceffect(LPE)isobserved,withanoptimalLPVsensitivityof75mV/mminx=0.35sample.ThedependenceofLPEontemperatureandAlcompositionisinvestigated,andthepossiblemechanismisdiscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.
简介:Weexperimentallydemonstratea4-Gb/sradio-over-fiber(RoF)systemwith40-kmfiberand2-mwirelessdistancedownstreamat100-GHzcarrier.Tothebestofourknowledge,thisisforthefirsttimeinChinatorealizeopticalwirelesslinkat100GHz.Inthisletter,simpleintensitymodulatorwithdirectdetector(IM-DD)modulationisemployedandopticalpowerpenaltyafter40-kmsinglemodefiber(SMF)-28and2-mairlinkis3.2dBwithbit-error-rate(BER)at1×109.