简介：TheelectricalnonlinearityofsiliconmodulatorsbasedonreversedPNjunctionswasfoundtoseverelylimitthelinearityofthemodulators.Thiseffect,however,wasinadvertentlyneglectedinpreviousstudies.Consideringtheelectricalnonlinearityinsimulation,a32.2dBdegradationintheCDR3(i.e.,thesuppressionratiobetweenthefundamentalsignalandintermodulationdistortion)ofthemodulatorwasobservedatamodulationspeedof12GHz,andthespuriousfreedynamicrangewassimultaneouslydegradedby17.4dB.ItwasalsofoundthatthelinearityofthesiliconmodulatorcouldbeimprovedbyreducingtheseriesresistanceofthePNjunction.Thefrequencydependenceofthelinearityduetotheelectricalnonlinearitywasalsoinvestigated.

简介：Ahigh-speedandhigh-resolutionopticalA/Dquantizerisproposed.Itsarchitectureisdiscussed.Bitcircuitsarebuiltbyusingthephasemodulatorsinparallel.Basedonthedifferentcharacterofthehalf-wavevoltageforeveryphasemodulatorandthepolarizedbiasdesignofincidentlight,theRFinputsignaliscodedandtransmittedintheformofopticaldigitalsignal.Accordingtotheprincipleofthearchitecture,thehigh-resolutionquantizerswith8-bitand12-bit,etal.arebuilt,whichoperateat100GS/s.Theirquantizationnoiseisinvariablealmostwithbitcircuitsincreasing.Thesimulationresultof4-bitA/Dquantizerisalsogiven.

简介：Weproposeanovelsiliconopticalphaseshifterstructurebasedonheterogeneousstrip-loadedwaveguidesonaphotonicsilicononinsulator(SOI)platform.ThefeaturesofanetchlessSOIlayerandloadedstripwouldenhancetheperformanceanduniformityofsiliconopticalmodulatorsonalarge-scalewafer.WeimplementedthephaseshifterbyloadinganamorphoussiliconstripontoanSOIlayerwithaverticalPNdiodestructure.ComparedtotheconventionallateralPNphaseshifterbasedonhalf-etchedribwaveguides,thisphaseshiftershowsa>1.5timesenhancementofmodulationefficiencyandprovides>20GHzhigh-speedoperation.

简介：第一次，周期的装载电极和蘑菇类型波导被联合基于联合的不对称的intra-step-barrier改进旅行波浪electroabsorption调节的人(TWEAM)的表演两倍拉紧的量井(AICD-SQW)。周期的蘑菇类型TWEAM的电的调整反应被使用相等的电路模型获得，并且与常规蘑菇类型TWEAM对应物的模拟结果相比。相等的电路模型模拟结果显示为300m的作为模范的调整长度，有周期的传播线装载的蘑菇类型TWEAM能完成宽得多的带宽大约99.7GHz和43.1GHz比有为35和45结束的大约43GHz和33GHz的常规对应物分别地。

简介：Reductionofmodulatorenergyconsumptionto10fJ∕bitisessentialforthesustainabledevelopmentofcommunicationsystems.Lumpedmodulatorsmightbeaviablesolutionifinstructedbyacompletetheorysystem.Here,wepresentacompleteanalyticalelectro-opticresponsetheory,energyconsumptionanalysis,andeyediagramsonabsolutescalesforlumpedmodulators.Consequentlythespeedlimitationisunderstoodandalleviatedbysingle-driveconfiguration,andcomprehensiveknowledgeintotheenergydependenceonstructuralparameterssignificantlyreducesenergyconsumption.Theresultsshowthatsiliconmodulationenergyaslowas80.8and21.5fJ∕bitcanbeachievedat28Gbdunder50and10Ωimpedancedrivers,respectively.A50Gbdmodulationisalsoshowntobepossible.Theanalyticalmodelscanbeextendedtolumpedmodulatorsonothermaterialplatformsandofferapromisingsolutiontothecurrentchallengesofmodulationenergyreduction.