简介：Thispaperproposesathermalanalyticalmodelofcurrentgainforbipolarjunctiontransistor-bipolarstaticinductiontransistor(BJT-BSIT)compounddeviceinthelowcurrentoperation.Italsoproposesabestthermalcompensatingfactortothecompounddevicethatindicatestherelationshipbetweenthethermalvariationrateofcurrentgainanddevicestructure.Thisisimportantforthedesignofcompounddevicetobeoptimized.Finally,theanalyticalmodelisfoundtobeingoodagreementwithnumericalsimulationandexperimentalresults.Thetestresultsdemonstratethatthermalvariationrateofcurrentgainisbelow10%in25℃-85℃and20%in55℃-25℃.

简介：Anovelburningtechniqueformakingasemiconductingsingle-walledcarbonnanotubes(SWNTs)transistorassembledbythedielectrophoreticforcewassuggested.Thefabricationprocessconsistedoftwosteps.First,toalignandattachabundleofSWNTsbetweenthesourceanddrain,thealternating(AC)voltagewasappliedtotheelectrodes.WhenabundleofSWNTswasconnectedbetweentwoelectrodes,someofmetallicnanotubesandsemi-conducingnanotubesexistedtogether.ThesecondstepistoburnthemetallicSWNTSbyapplyingthevoltagebetweentwoelectrodes.Withincreasingthevoltage,morecurrentflowedthroughthemetallicSWNTs,thus,themetallicSWNTsburntearlierthanthesemiconductingone.Thistechniqueenablestoobtainonlysemi-conductingSWNTsconnectioninthetransistor.ThroughtheI—Vcharacteristicgraph,themomentofmetallicSWNTsburningandthecharacteristicofsemi-conducingnanotubeswereverified.

简介：介绍最佳被设计互补金属氧化物半导体活跃象素传感器。在这个传感器中，使用是作为恢复在传统的传感器中代替NMOSFET的PMOSFET晶体管。基于0.25m互补金属氧化物半导体技术与在一样下面的传统的活跃象素传感器相比调节，模仿新结构设备更高举办的结果表演signal-to-noise比率，更宽的输出秋千，更宽的动态范围和更快的读出加速。

简介：包括碳nanotubes(CNT)和graphene，碳nanostructures由于他们的特殊结构，优秀电的性质和高化学的稳定性广泛地被学习了。与纳米技术和nanoscience的发展，各种各样的方法被开发了综合CNTs/graphene并且装配他们进microelectronic/sensor设备。在这评论，我们主要为生物传感器在地效果晶体管(联邦货物税)在CNT和graphene和他们的应用程序的合成表明最近的进步。

简介：一只新奇侧面的双门通道领域效果晶体管(DG-TFET)被学习，它的性能被二维的设备模拟与代码ISE介绍。Theresult证明这只新通道晶体管允许在60mV/dec下面的更陡峭的次于最低限度的秋千，超级低供应电压(在V-DD<合用0.3V)并且rail-to-rail逻辑(在排水管来源电压V-DS=的重要在状态上电流50mV)为好攻击的技术，high-k/metal的可获得性的假设与相等的门氧化物厚度传输结束字符=叠0.24nm和工作工作差别4.5材料的eV。

简介：Theprincipleofthetwocarrierscontributingtocarrythepixelsignalchargesisfirstlypresented,andthenthebipolarjunctionphotogatetransistor(BJPT)withhighperformanceisproposedfortheCMOSimagesensor.Thenumericalanalyticalmodelofthephoto-chargetransferforthebipolarjunctionphotogateisestablishedindetail.Somenumericalsimulationsareobtainedunder0.6μmCMOSprocess,whichshowthatitsreadoutrateincreasesexponentiallywiththeincreaseofthephoto-chargeatappliedvoltage.

简介：Inthiswork,wereportabroadbandterahertzwavemodulatorbasedonatop-gategraphenefieldeffecttransistorwithpolyimideasthegatedielectriconaPETsubstrate.ThetransmissionoftheterahertzwaveismodulatedbycontrollingtheFermilevelofgrapheneviathepolyimideasthetop-gatedielectricmaterialinsteadofthetraditionaldielectricmaterials.Itisfoundthattheterahertzmodulatorcanachieveamodulationdepthof~20.9%withasmalloperatinggatevoltageof3.5Vandalowinsertionlossof2.1dB.

简介：由地可配置的nanogranularSiO2的基于的离子/电子的混合synaptic晶体管gated拍摄的indium–zinc-oxide(IZO)被报导。设备展出了上面的高当前的开／关比率107,∼14cm2V−1s−1和∼80mV/decade的一个低次于最低限度的秋千。门偏爱将在隧道/电介质接口调制在质子和电子之间的相互影响。由于在nanogranularSiO2电影以内的短暂质子流动的动态调整，隧道电流将动态地被修改。短期的synaptic粘性例如短期的potentiation和短期的消沉，在建议IZOsynaptic晶体管上被模仿。结果显示这里建议的synaptic晶体管在未来neuromorphic设备有潜在的应用。

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