简介:
简介:Reflectorsareanessentialcomponentforon-chipintegratedphotonics.Here,weproposeanewmethodfordesigningreflectorsontheprevalentthin-film-on-insulatorplatformbyusinggenetic-algorithmoptimization.Insimulation,thedesignedreflectorwithafootprintofonly2.16μm×2.16μmcanachieve~97%reflectivityand1dBbandwidthaswideas220nm.Thestructureiscomposedofrandomlydistributedpixelsandishighlyrobustagainsttheinevitablecornerroundingeffectindevicefabrication.Inexperiment,wefabricatedon-chipFabry–Perot(FP)cavitiesconstructedfromoptimizedreflectors.ThoseFPcavitieshaveintrinsicqualityfactorsof>2000withthehighestvaluebeyond4000inaspectralwidthof200nm.ThereflectivityfittedfromtheFPcavityresonancesis>85%intheentirewavelengthrangeof1440–1640nmandisbeyond95%atsomewavelengths.ThefabricationprocessesareCMOScompatibleandrequireonlyonestepoflithographyandetch.Thedevicescanbeusedasastandardmoduleinintegratedphotoniccircuitryforwideapplicationsinon-chipsemiconductorlaserstructuresandopticalsignalprocessing.
简介:在在华中的三个峡水库(TGR)区域下面的外壳的结构的地震研究被地震车站的稀少、不平的分发限制了。增加车站范围,我们从2008~2010在三夏天期间在TGR区域使三成为了一个活动seismologic数组的推广。这里我们沿着通过基于新地震波形,数据和速度建模的中央TGR区域的西方东方侧面的现在的解释由地区性的地震数据抑制了。在在10和20km附近的深度的二个猛烈中间外壳的思考接口在TGR下面被看见。浅反射镜定义Zigui的底部()盆。莫霍思考的振幅是相当弱的新波形数据表演,并且在莫霍下面,在54-km深度附近有一个强壮的反射镜。在TGR区域,莫霍是一个坡度而非一条锋利的边界,是可能的。我们推测在在TGR区域的上面的披风的坡度莫霍和54-km-deep反射镜可以是Qinling的副产品()-Dabie()orogen。
简介:Wereport,forthefirsttimetoourknowledge,anon-chipmode-lockedlaserdiode(OCMLLD)thatemploysmultimodeinterferencereflectorstoeliminatetheneedoffacetmirrorstoformthecavity.TheresultisanOCMLLDthatdoesnotrequirecleavedfacetstooperate,enablingustolocatethisOCMLLDatanylocationwithinthephotonicchip.ThisOCMLLDprovidesasimplesourceofopticalpulsesthatcanbeinsertedwithinaphotonicintegratedcircuitchipforsubsequentphotonicsignalprocessingoperationswithinthechip(modulation,opticalfiltering,pulseratemultiplication,andsoon).Thedevicewasdesignedusingstandardizedbuildingblocksofagenericactive/passiveInPtechnologyplatform,fabricatedinamulti-projectwaferrun,andachievedmode-lockingoperationatitsfundamentalfrequency,giventheuncertaintyatthedesignstepoftheopticallengthofthesemirrors,criticaltoachievecollidingpulsemode-lockedoperation.
简介:Threekindsof650nmAlGaInPresonantcavitylight-emittingdiodes(RCLEDs)arefabricatedbymetalorganicchemicalvapordeposition(MOCVD)withdifferentnumbersofpairsoftopdistributedBraggreflectors(DBRs),whichare15,10and5,respectively.Bycomparingthefullwidthathalfmaximum(FWHM),lightpowerandtheangularfar-fieldemissionofthedevices,thedevicewith15pairsoftopDBRsshowsthebestperformance.ItsFWHMis13.4nmandthelightpoweris0.63mWatadrivingcurrentof30mA.