简介:Thedegradationmechanismofenhancement-modeAlGaN/GaNhighelectronmobilitytransistors(HEMTs)fabricatedbyfluorineplasmaionimplantationtechnologyisonemajorconcernofHEMT’sreliability.Itisobservedthatthethresholdvoltageshowsasignificantnegativeshiftduringthetypicallong-termon-stategateoverdrivestress.Thedegradationdoesnotoriginatefromthepresenceofas-growntrapsintheAlGaNbarrierlayerorthegeneratedtrapsduringfluorineionimplantationprocess.Bycomparingtherelationshipsbetweentheshiftofthresholdvoltageandthecumulativeinjectedelectronsunderdifferentstressconditions,agoodagreementisobserved.Itprovidesdirectexperimentalevidencetosupporttheimpactionizationphysicalmodel,inwhichthedegradationofE-modeHEMTsundergateoverdrivestresscanbeexplainedbytheionizationoffluorineionsintheAlGaNbarrierlayerbyelectronsinjectedfrom2DEGchannel.Furthermore,ourresultsshowthattherearefewnewtrapsgeneratedintheAlGaNbarrierlayerduringthegateoverdrivestress,andtheionizedfluorineionscannotrecapturetheelectrons.