简介：在测试了ＡｌＧａＡｓ／ＧａＡｓＨＢＴ（异质结晶体管）的直流特性和Ｓ参数的基础上，建立了其微波小信号等效电路，准确的等效电路有利于其微波线性应用的分析．应用Ｖｏｌｔｅｒａ级数，计算了ＡｌＧａＡｓ／ＧａＡｓＨＢＴ放大器的三阶互调失真，计算结果和双音测试结果相当一致，该ＨＢＴ良好的线性特性证明了其较好的线性应用前景

简介：为做调整的GaAs/Al0.3量井用解决时间的magneto-Kerr旋转大小被学习的Ga0.7。电子旋转松驰时间和它的在里面飞机anisotropy作为光学地注射的电子密度的功能被学习。而且，Rashba的相对力量和联合的Dresselhausspinorbit回答，并且这样观察旋转松驰时间anisotropy，被532nm的另外的刺激进一步调节连续波浪激光，经由一个光gating方法表明有效旋转松驰操作。

简介：The810-nmInGaAlAs/AlGaAsdoublequantumwell(QW)semiconductorlaserswithasymmetricwaveg-uidestructures,grownbymolecularbeamepitaxy,showhighquantumefficiencyandhigh-powerconver-sionefficiencyatcontinuous-wave(CW)poweroutput.Thethresholdcurrentdensityandslopeefficiencyofthedeviceare180A/cm~2and1.3W/A,respectively.Theinternallossandtheinternalquantumefficiencyare1.7cm~(-1)and93%,respectively.The70%maximumpowerconversionefficiencyisachievedwithnarrowfar-fieldpatterns.

简介：OpticalsimulationsofGaAs/AlGaAsthin-filmwaveguideswereperformedforinvestigatingthedependenceofthemodalbehavioronwaveguidegeometryandtheresultinganalyticalsensitivity.Simulationswereperformedfortwodistinctmid-infraredwavelengths,therebydemonstratingthenecessityofindividuallydesignedwaveguidestructuresforeachspectralregimeofinterest.Hence,themodalbehavior,sensitivity,andintensityoftheevanescentfieldwereinvestigatedviamodelingstudiesat1600and1000cm-1,therebyconfirmingtheutilityofsuchsimulationsfordesigningmid-infraredsensorsbasedonthin-filmwaveguidetechnology.