简介:Thelocalpressuredistributionsandresistancecoefficients(f1andf2)throughthesharp180degturninarelativelyshort(L/De=4)two-passsmoothandrib-roughenedchannelwereinvestigatedforaReynoldsnumberrangeof1.0×10^3,9.0×10^3.Theribpitch-to-herghtratios(p/e)were5,10,and20,Theribheight-to-hydraulicdiamterratios(e/De)were0.025,0.050and0.10,andtheribanglesofattack(a)were90,45,60,-45,and-60deg.Ridswereinstallednotonlyinbeforeandafterturnregionsbutalsointurnregion.TheresultsshowthatresistancecoefficientsremainapproximatelyconstantwhenReynoldsnumberismorethan3.0×10^4,Theeffectsoftheribconfiguration(ribspacing,ribheight,andriborientation)ontheinletstraightductresistancecoefficient(f2)weresignificant,however,theireffectsontheoverallresistancecoefficient(f1)weredilutedbythesharp-180turn.Forthisrelativelyshortchannel(L/De=4),theoverallresistancecoefficient(f1)wasgreatlyaffectedbythesharpturn.Correlationsfortheoverallresistance(f1)andinletstraightductresistancecoefficient(f2)arepresented.
简介:Broadband(1.6–18THz)terahertztime-domainspectroscopy(THz-TDS)andtime-resolvedterahertzspectroscopy(TRTS)wereperformedona54μmthickchalcogenideglass(As30Se30Te40)samplewithatwo-colorlaser-inducedairplasmaTHzsystemintransmissionandreflectionmodes,respectively.Twoabsorptionbandsat2–3and5–8THzwereobserved.TRTSrevealsanultrafastrelaxationprocessofthephotoinducedcarrierresponse,welldescribedbyarateequationmodelwithafiniteconcentrationofmid-bandgaptrapstatesforself-trappedexcitons.ThephotoinducedconductivitycanbewelldescribedbytheDrude–Smithconductivitymodelwithacarrierscatteringtimeof12–17fs,andweobservesignificantcarrierlocalizationeffects.Afastrefractiveindexchangewasobserved100fsbeforetheconductivityreacheditsmaximum,with2ordersofmagnitudelargeramplitudethanexpectedfortheopticallyinducedTHzKerreffect,indicatingthatfreecarriersareresponsibleforthetransientindexchange.
简介:TheGroupofEnergyMaterials(GEM)inIMPisengagedintheirradiationresponseofmaterialscandidatetoadvancednuclearenergysystems(GenIV,fusionreactors).Themajorprogressofresearchinourgroupin2016isintheirradiationhardening/embrittlementofoxide-dispersion-strengthened(ODS)ferriticsteelsandVanadiumalloys,andinthemechanismsunderlyingdamageproductioninsiliconcarbide(SiC)fibers.Abriefdescriptionisgivenasfollows.1.EffectoftheoxidenanoparticlesontheirradiationhardeningofODSferriticsteelsTheinfluenceofoxidenanoparticlesontheirradiationresistanceofODSferriticsteelsisacrucialissuefortheupgradeofODSsteels.
简介:Heavyionbeamsaregenerallyrecognizedasoneofpowerfulmutagensinplantbreedingtogeneratenewmutantswithidealorusefulagronomiccharacters[1].12C6+ionbeams(80MeV/u)acceleratedbyHeavyIonResearchFacilityinLanzhou(HIRFL)wereusedtoirradiatewheatsamples,oneofthemajorwheatvarietiesinQinghaiprovince,namedGaoyuan448.Theradiationdosesrangedfrom10to200Gy.Theirradiatedsamples,controls,andanothermajorwheatvarietynamedAbowereplantedinfarmlocatinginLeducountyofQinghaiprovincein2014.
简介:Study on IMF Emission in 30 MeV/u 40Ar Induced ReattionsStudyonIMFEmissionin30MeV/u40ArInducedReattions¥ZhuYongtai;XuHus...
简介:ThepropertiesofPbn(n=2―30)clustersincludingbindingenergies,seconddifferencesinenergy,andHOMO-LUMOgaps,especiallyfragmentationenergiesandionizationpotentials,havebeenstudiedbyabinitiocalculation.ThemainfragmentationproductsofPbn+areshowntobePb+Pbn-1+forn≤14andtwosmallclusterfragmentsforlargeroneswithn>14.ThePb13+appearsfrequentlyastheproductsinthefragmentationsoflargeclusters.Also,thecalculatedionizationpotentialsoftheclustersareconsistentwiththeexperimentdata.
简介:Veryrecently,theBelleandBESIIIexperimentsobservedanewcharmonium-likestateX(3823),whichisagoodcandidatefortheD-wavecharmonium(13D2).BecausetheX(3823)isjustneartheDˉDthreshold,thedecayX(3823)!J=+??canbeagoldenchanneltotestthesignificanceofcoupled-channeleffects.Inthiswork[1],thisdecayisconsideredincludingboththehidden-charmdipionandtheusualquantumchromodynamicsmultipoleexpansion(QCDME)contributions.
简介:Grapheneistwodimensionalmaterialswhichismadeofhoneycombedcarbonatoms.Itattractsextensiveinterestsforitswonderfulcharacteristicsthatmakethegrapheneapotentialcandidateinfieldsofmicroelectronicsproduction,moleculedetection,desalinationandDNAsequencing.Highlychargedion(HCI)hashugepotentialenergyforpeelingoffelectrons.Wheninteractingwithsolidsurface,theHCIdistortedthesolidlatticeviapotentialdepositionandthenthenanostructureswereformedonthesolidsurface.TheHCIwasexpectedasatoolforsurfacemodification.Inthiswork,HOPGandgraphemewereirradiatedwithXeq+andArq+ions.ThetypicalRamanspectraofgrapheneandHOPGirradiatedwithhighlychargedionswereshowninFig.1.TheDpeakappearedat1335cm??1onthespectraofgrapheneirradiatedwithhighlychargedions.TheintensityofDpeakincreasedwithfluence.TheratioofintensityofDpeaktothatofGpeakvariedwithfluenceinFig.2.Theratioroselinearlywiththesquarerootoffluencewhenfluencewaslow.Theratiosaturatedwhentheirradiationfluencewashigh.Thecriticalfluencedependedonthechargestateofion.Thehigherchargestateitwas,thelowercriticalfluenceitwouldbe.
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简介:IsotopesTemperaturein40Ar+158Tband108AgReactionsat30MeV/u¥DaiGuangxi;FuYanbiao;HeZhiyong;DuanLimin;LiZuyuandZhangBaog?..
简介:FissionwithCompanionofParticlesEmissionin40Ar+159TbandnatAgReactionsat30MeV/u¥DaiGuangxi,FuYanbiao,HeZhiyong;DuanLimi?..
简介:AnEmissionofComplexParticlesinCoulombInstabilityinReactions30MeV/u40Ar+159TbandnatAg¥DaiGuangxi,;FuYanbiao;HeZhigong;?..
简介:ComparisonbetweenThreefoldFragmentationandSequentialFissionin40Ar+159TbReactionsat30MeV/u¥DaiGuangxi;FuYanbiao;HeZhiyong...
简介:WepresentthetemperaturedependentelectricaltransportmeasurementsofAg/Si(111)-(√3×√3)R30°bytheinsitumicro-four-pointprobemethodintegratedwithscanningtunnelingmicroscopy.Thesurfacestructurecharacterizationsshowhexagonalpatternsatroomtemperature,whichsupportstheinequivalenttriangle(IET)model.Ametal-insulatortransitionoccursat-115K.Thelowtemperaturetransportmeasurementsclearlyrevealthestronglocalizationcharacteristicsoftheinsulatingphase.