简介:TheanalysisofsolarcellperformancehasbeendonebysimulatingtheexternalI-Vcharacteristicsofn^+/p/p^+singlecrystalsiliconsolarcellunderhighlightintensityand1.5airmass(AM).Thismethodallowsthemaximizationofsolarcellefficiency.Tofabricatelow-costn^+/p/p^+singlecrystalsiliconsolarcells,solidsourceofdopedphosphorousandboronwasused.
简介:Photoluminescenceevaluationofpandntype6H-SiCsampleshasbeendone.Resultsshowthatatlowtemperaturethephotoluminescenceof6H-SiCisclearlydominatedbydonor-acceptorpairtransitions,insomecase,free-to-donortransitioncouldbeobservedathighertemperature.Thethermalquenchingprocessesofthephotoluminescencehavebeeninvestigatedtodeterminethepossibleionizationnenergiesoftheimpurities.
简介:ThePNjunctionphotodiodeisfabricatedwithhighresistivityP-typesilicon(ρ=12000Ω·cm).TheexperimentalC-Vcurveswithandwithoutlaserradiationweremeasured.Therelativechangeofcapacitancecanbegreaterthan100%,whichismuchgreaterthantherelativechangeforlowresistivityP-typesilicon.Therelativechageofcaacitancewithandwithoutlaserradiationatzerobiasis121.7%.