简介:AnewlygrownBaGa4Se7crystalhasbeensynthesizedviatheBridgman-Stockbargertechnique.Thisnewcrystalhasadvantagesofhighnonlinearoptics(NLO)coefficients,highlaserdamagethresholds,andwidetransparentregions.TheBaGa4Se7crystalhasbrightapplicationprospectsasanonlineargainmediuminmid-infraredandterahertzregions.Inthispaper,thecrystallinestructureandsyntheticmethodoftheBaGa4Se7crystalareintroduced.Therefractiveindicesandabsorptioncoefficientsalongthreedielectricaxesbetween0.1THzand1.0THzarealsoobtained.Theterahertzdifferencefrequencygeneration(THz-DFG)characteristicsbasedontheBaGa4Se7crystalinthefrequencyrangeof0.1THzto1.0THzareanalyzedtheoreticallyandthephase-matchingconditionsarecalculated.TheapplicationofBaGa4Se7crystalsinterahertzwavegenerationisalsodiscussed.
简介:Inthetheorycalculationoflatticevibration,oneacousticandthreeopticalbrancheswerefoundtocomposethephononvibratingspectrum.Someisolatedmodeswithfrequencieslyingoutsidethecontinuumbrancheswillariseunderthedefectstates.TheselocalmodelresultsinthesharppeaksintheinfraredabsorptionandRamanspectra.Fromcalculationoftheinfraredabsorption,thelocalmodewiththeinfraredactivityisobtainedintheinfraredabsorptionspectrumofMXcompounds.
简介:给出了采用Xilinx新一代FPGA并内嵌硬核PowerPC440的Virtex-5FXT系列芯片来进行嵌入式系统设计的软硬件设计方法。该方法以PowerPC440为微处理器,并通过PLB总线与以太网控制核相连,然后利用以太网实现高速数据存储。文中同时给出了该嵌入式系统的硬件构架和部分源程序代码。
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简介:Theoperationprincipleofanarrayedwaveguidegrating(AWG)multiplexerisintroducedandthe4×4AWGwithfollowingdesignparametersisdiscussedindetail,suchasthechoiceofwavelength,theneighboringarrayedwaveguidedistanceΔL,thechannelfrequencyintervalΔf,andthefreespectralrange.Thestructureof4×4AWGisdesignedandtheresultofstimulatedtestisalsogiven.Analysisshowsthatthe4×4AWGischaracterizedbyawidedynamicrange,lowcrosstalk,betterspectrumproperties,andacompactstructure.
简介:WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.