简介:Recently,Changetal.proposedaSudoku-basedsecretimagesharingscheme.TheyutilizedtheSudokugridtogeneratemeaningfulshadowimages,andtheirschemesatisfiedallessentialrequirements.BasedonChangetal.'sscheme,weproposeanovel(n,n)secretimagesharingschemebasedonSudoku.Intheproposedscheme,asecretimagecanbesharedamongndifferentcoverimagesbygeneratingnshadowimages,andthesecretimagecanbereconstructedwithoutdistortionusingonlythesenshadowimages.Also,theproposedschemecansolvetheoverflowandunderflowproblems.Theexperimentalresultsshowthatthevisualqualityoftheshadowimagesissatisfactory.Furthermore,theproposedschemeallowsforalargeembeddingcapacity.
简介:InviewofthelimitationsofaRn-GnmodelinthelowfrequencyrangeandthedefectsofanEn-Inmodelincommonusenow,thispaperbuildsacompleteEn-Inmodelaccordingtothetheoryofrandomharmonic.Theparametersforthelow-noisedesignsuchastheequivalentinputnoisyvoltageEns,theoptimumsourceimpedanceZsoptandtheminimumnoisefigureFmincanbecalculatedaccuratelybyusingthisEn-Inmodelbecauseitconsidersthecoherencebetweenthenoisesourcesfully.Moreover,thispaperpointsoutthatitwillcausethemaximum30%miscalculationwhenneglectingtheeffectsofthecorrelationcoefficient7.Usingtheseries-seriescircuitsasanexample,thispaperdiscussesthemethodsfortheEn-InnoiseanalysisofelectroniccircuitspreliminarilyanddemonstratesitscorrectnessthroughthecomparisonbetweenthesimulatedandmeasuredresultsoftheminimumnoisefigureFminofasinglecurrentseriesnegativefeedbackcircuit.
简介:Linearcomplexityandk-errorlinearcomplexityofthestreamcipheraretwoimportantstandardstoscaletherandomicityofkeystreams.Forthe2n-periodicperiodicbinarysequencewithlinearcomplexity2n1andk=2,3,thenumberofsequenceswithgivenk-errorlinearcomplexityandtheexpectedk-errorlinearcomplexityareprovided.Moreover,theproportionofthesequenceswhosek-errorlinearcomplexityisbiggerthantheexpectedvalueisanalyzed.
简介:Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.