简介:TheCa_2SiO_4:Dy~(3+)phosphorwassynthesizedbythehightemperaturesolid-statereactionmethodinair.TheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorshowsseveralbandsat486,575,and665nmunderthe365-nmexcitation.TheeffectsofLi~+,Na~+,andK~+ontheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorwerestudied,TheresultsshowthattheemissionspectrumintensityisgreatlyinfluencedbyLi~+,Na~+,andK~+.Thechargecompensationconcentrationcorrespondingtothemaximumemissionintensityisdifferentwithdifferentchargecompensations.
简介:Adiode-end-pumpedelectro-optic(EO)Q-switchedNd:YVO4laseroperatingatrepetitionrateof10kpps(pulsespersecond)wasreported.AblockofLa3Ga5SiO14(LGS)singlecrystalwasusedasaQ-switchandthedriverwasametaloxidesemiconductorfieldeffecttransistor(MOS-FET)pulserofhighrepetitionrateandhighvoltage.Atcontinuouswave(CW)operation,theslopeefficiencyofthelaserwas46%,andmaximumoptical-to-opticalefficiencywas38.5%.Usinganoutputcouplerwithtransmissionof70%,a10-kppsQ-switchedpulsetrainwith0.4-mJmonopulseenergyand8.2-nspulsewidthwasachieved,theopticalconversionefficiencywasaround15%,andthebeamqualityM2factorwaslessthan1.2.
简介:采用高温固相法合成系列Eu^2+掺杂的单一基质的白光荧光粉(Sr_(0.95)Mg_(0.05))_3(PO_4)_2.该荧光粉可有效被270~390nm的紫外光激发,激发波长范围与紫外LED芯片相匹配.在激发波长为350nm时,发射光谱中有两个发射峰,峰值分别位于410nm和570nm,对应于Eu^2+的4f65d1→4f7跃迁,是Eu^2+占据了基质中Sr~(2+)的十配位和六配位的两种不同的格位后,形成的两个发光中心.当Eu^2+的掺杂浓度为1mol%时,具有最大的发光强度,继续增加Eu^2+的浓度后,会出现浓度猝灭现象.通过将Eu^2+的掺杂浓度从0到0.01,可以使该荧光粉的CIE色坐标从(0.2595,0.1987)的蓝光区域逐渐移动到(0.3245,03133)的白光区域.基于实验结果和理论分析计算表明,这种荧光粉是一种潜在的用近紫外光激发产生白光LED的荧光粉.
简介:Usingamicrowavegenerator,chlorinedilutedbyheliumwasdissociatedtochlorineatomsthatsubse-quentlyreactedwithhydrogenazidetoproducetheexcitedstatesofNCl(a1△).Meanwhile,moleculariodinewithcarriergasofheliumreactedwithatomicchlorinetoproduceatomiciodinewhichthenwaspumpedtoexcitedstateofI(2P1/2)byanenergytransferreactionfromNCl(a1△).Inthispaper,thechangesofNCl(a1△)andNCl(bi∑)emissionintensityispresentedwhenI2/HeisintroducedintothestreamofCl/Cl2/He/HN3/NCl(a1△)/NCl(b1∑).ThedependencesofatomiciodineI(2P1/2)onflowratesofgaseswerealsoinvestigated.TheoptimumparametersforI(2P1/2)productionaregiven.
简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.
简介:ACe3+tion-dopedα-NaYF4singlecrystalofhighqualityisgrownsuccessfullybyanimprovedfluxBridgmanmethodundertheconditionsoftakingthechemicalrawcompositionofNaF:KF:YF3:CeF3inthemolarratioof30∶18∶48∶4,wheretheKFisshowntobeaneffectiveassistantflux.Thexraydiffraction,absorptionspectra,excitationspectra,andemissionspectraoftheCe3+t-dopedα-NaYF4singlecrystalaremeasuredtoinvestigatethephaseandopticalpropertiesofthesinglecrystals.TheabsorptionspectrumoftheCe3+t:α-NaYF4showsastrongbandthatpeaksatthewavelengthof300nm.TheemissionspectrumoftheCe3+t:α-NaYF4emitsanintenseultraviolet(UV)bandatthewavelengthof332nmundertheexcitationof300nmlight.Twoseparatedluminousbandsof330and350nm,whichcorrespondtothetransitions5d→2F25∕2and5d→F7∕2,canbeobtainedbyGaussfitting.ThestrongemissionintensityattheUVbandandtheexcellentopticaltransmissionintherangeofUVwavelengthsindicatethatCe3+t:α-NaYF4singlecrystalscanbeconsideredasapromisingmaterialforUVlasers.
简介:FourkindsofY2O3stabilizedZrO2(YSZ)thinfilmswithdifferentY2O3contents(from0to12mol%)aredepositedonBK7glasssubstratesbyelectron-beamevaporationmethod.TheeffectsofdifferentY2O3dopantcontentsonresidualstress,structure,andopticalpropertiesofZrO2thinfilmsareinvestigated.TheresultsshowthatresidualstressinYSZthinfilmsvariesfromtensiletocompressivewiththeincreaseofY2O3molarcontent.TheadditionofY2O3isbeneficialtothecrystallizationofYSZthinfilmandtransformationfromamorphoustohightemperaturephase,andtherefractiveindexdecreaseswiththeincreaseofY2O3molarcontent.Moreover,thevariationsofresidualstressandtheshiftsofrefractiveindexcorrespondtotheevolutionofstructuresinducedbytheadditionofY2O3.
简介:WhenfemtosecondlaserpulsesinterferewithchirpedfemtosecondlaserpulsesinAs2S3fiber,achirpedfibergratingisformed.Ananalyticalexpressionisgiventodescribethechirpedgrating,anditsBraggreflectivityiscalculated.BecauseofthehighphotosensitiveeffectofAs2S3material,thechirpedfibergratinghasawideBraggreflectivespectrumandhighreflectivitybychoosingproperparameters.Thisindicatesthatthechirpedfibergratingcanbeusedasastretcherinthefemtosecondchirpedpulseamplification(CPA)system.
简介:实验通过高温固相法合成了不同气氛条件下的BaZn2(BO3)2荧光粉.在空气气氛条件下制备的BaZn_2(BO_3)_2样品,发射黄色的荧光,峰位在543nm处,这是由颗粒中单个带负电荷的氧填隙离子O-i中心捕获价带上的光生空穴,与导带上落下的光生电子辐射复合产生的.在氮氢还原气氛条件下的BaZn_2(BO_3)_2样品,发射绿色的荧光,峰位在500nm处,这是由于在颗粒中光生电子经过无辐射跃迁,落入被单一电离的氧空位缺陷V*o,再由缺陷回到靠近价带,与光生空穴复合产生可见光的发射.BaZn_2(BO_3)_2荧光粉紫外波段有很强的吸收,并且荧光衰减寿命和稀土元素掺杂的荧光粉寿命相当.因此BaZn_2(BO_3)_2荧光粉在用于白光LED时,将会具有广泛的应用前景与潜在的商业价值.