简介：Basedonthedifferenceofhydroxygroupconfigurationondifferentplanesofα-Fe2O3nanoparticles,usingthespecialadsorptionandcoordinationofphosphateonthe(001)planeofα-Fe2O3,well-crystallizedandwelldispersedα-Fe2O3nanodiskswithdiameterof150–200nmandthicknessof40–80nmweresynthesizedviaahydrothermalmethod.Themagneticpropertiesofsynthesizednanodiskswereinvestigated.Itwasfoundthatthenanodiskspossessedasaturationmagnetization(Ms)of0.38emu/g,aremanentmagnetization(Mr)of0.031emu/gandacoercivityof452.91Oeatroomtemperature.TheMrandcoercivityofsynthesizedα-Fe2O3nanodisksarehigherandtheMsislowerthanthoseofotherpreviouslyreportedα-Fe2O3nanostructures.

简介：Intrinsiccarrierconcentration（ni）isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband（NcandNv）at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction（x）at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi（001）andSi1-xGex（001）and（101）materialsat300KincreasessignificantlywithincreasingGefraction（x）,whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.

简介：