简介:WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.