Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4-中国期刊网

摘要 Inthispaper,polycrystallinesiliconfilmsweredepositedbyelectroncyclotronresonanceplasma-enhancedchemicalvapordeposition(ECR-PECVD)usingSiH_4/ArandSiH_4/H_2gaseousmixture.EffectsofargonflowrateonthedepositionefficiencyandthefilmpropertywereinvestigatedbycomparingwithH_2.TheresultsindicatedthatthedepositionrateofusingArasdischargegaswas1.5-2timeshigherthanthatofusingH_2,whilethepreferredorientationsandthegrainsizesofthefilmswereanalogous.FilmcrystallinityincreasedwiththeincreaseofArflowrate.OptimizedflowratioofSiH_4toArwasobtainedasF(SiH_4):F(Ar)=10:70forthehighestdepositionrate.

1. Preparation of Ultrafine Si Powders from SiH4 by Laser-induced Gas Phase Reaction.材料科学与工程,1995-01.
2GONGHeng-xiang;HEYun-yao;WangQi-feng;JINGuo-juan;FANGZe-bo;WANGYin-yue. Polycrystalline ZnO Films Deposited on Glass by RF Reactive Sputtering.物理电子学,2004-02.
3QIANGWei;WANGChangan;等. Instability of nc-Si: H Films Fabricated by PECVD.物理电子学,1999-01.
4SHEN Hualong;WANG Hui;YAN Hui;ZHANG Ming;PAN Qingtao;JIA Haijun;MAI Yaohua. Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD.材料科学与工程,2014-05.
5LIDai－zong YUZhuo 等. Comparison of GexSi1—x Grown by UHV／CVD from Si2H6／GeH4 and SiH4／GeH4.物理电子学,1999-03.
6Chockalingam JAYANTHI;Swaminathan DHANAPANDIAN;Kollegal Ramakrishna MURALI. Photoelectrochemical behaviour of Cdln2S4 films deposited by pulse electrodeposition using non-aqueous electrolyte.材料科学与工程,2013-04.
7CHENGBu－wen;LIDai－zong;等. Growth of SiGe Films by Cold—wall UHV／CVD Using GeH4 and Si2H6.物理电子学,2000-03.
8Yanhui Zhao;Guoqiang Lin;Jinquan Xiao;Chuang Dong;Lishi Wen. Effect of Sample Configuration on Droplet-Particles of TiN Films Deposited by Pulse Biased Arc Ion Plating.材料科学与工程,2009-05.
9HU Li-jun ZHUANG Hui-zhao XUE Cheng-shan XUE Shou-bin. Formation of GaN Nanowires by Ammoniating Ga2O3 Films Deposited on Oxidized Al Layers on Si Substrate.物理电子学,2007-01.
10CAIWei;ZHANGJing－quan;等. CdTe Films Deposited by Closed—space Sublimation.物理电子学,2001-02.

Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

来源期刊

相关推荐

同分类资源更多

相关关键词

Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

来源期刊

相关推荐

同分类资源 更多

相关关键词

同分类资源更多