Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection-中国期刊网

摘要 WereportonastudyofinterfacialstructureofGaNfilmsgrownonGaAs(001)substratesbyplasma-assistedmolecularbeamepitaxyusingx-raygrazing-anglespecularreflection.WeshowthatinterfaciallayerswithelectrondensitiesdifferingfromthoseofGaNandGaAswereformedupondepositionofGaN.Itisalsofoundthattheinterfacialstructureofoursystemsdependsstronglyonthecourseoftheinitiallayerdeposition.ThephasepurityoftheGaNfilmswasexaminedbyx-rayreciprocalspacemapping.Asimplekineticgrowthmodelsuggestedbyourresultshasbeenpresented.

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Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

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Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

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