摘要
Changesinrefractiveindexandthecorrespondingchangesinthecharacteristicsofanopticalwaveguideinenablingpropagationoflightarethebasisformanymodernsiliconphotonicdevices.Opticalpropertiesoftheseactivenanoscalewaveguidesaresensitivetothelittlechangesingeometry,externalinjection/biasing,anddopingprofiles,andcanbecrucialindesignandmanufacturingprocesses.Thispaperbringstheactivesiliconwaveguideforcompletecharacterizationofvariousdistinctiveguidingparameters,includingperturbationinrealandimaginaryrefractiveindex,modeloss,groupvelocitydispersion,andbendingloss,whichcanbeinstrumentalindevelopingoptimaldesignspecificationsforvariousapplication-centricactivesiliconwaveguides.
出版日期
2017年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）
