摘要
ALarge-signalmodelforGaAsFETisderivedbasedonitssmall-signalSparame-tersandDCcharacteristics.TheharmonicbalancealgorithmisappliedtoanalyzeandoptimizetheFETfundamentalandharmonicoscillators,andthevaluesofsteadycurrentareobtained.Inthesolvingprocess,asimplifiedCADapproachisusedtoobtaintheparametersofmatchingnetworkwhentheoutputpowerismaximum.Finally,afundamentaloscillatorandaharmonicoscillatorofQ-bandarefabricated.Themeasurementsshowthatthetheoreticalanalysisandexperimentalresultsareingoodagreement.
出版日期
1992年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)