On the role of piezoelectricity in phonon properties and thermal conductivity of GaN nanofilms-中国期刊网

摘要 Theeffectofpiezoelectricityonphononpropertiesandthermalconductivityofgalliumnitride(GaN)nanofilmsistheoreticallyinvestigated.TheelasticitymodelisutilizedtoderivethephononpropertiesinspatiallyconfinedGaNnanofilms.ThepiezoelectricconstitutiverelationinGaNnanofilmsistakenintoaccountincalculatingthephonondispersionrelation.Themodifiedphonongroupvelocityandphonondensityofstateaswellasthephononthermalconductivityarealsoobtainedduetothecontributionofpiezoelectricity.TheoreticalresultsshowthatthepiezoelectricityinGaNnanofilmscanchangesignificantlythephononpropertiessuchasthephonongroupvelocityanddensityofstates,resultinginthevariationofthephononthermalconductivityofGaNnanofilmsremarkably.Moreover,thepiezoelectricityofGaNcanmodifythedependenceofthermalconductivityonthegeometricalsizeandtemperature.TheseresultscanbeusefulinmodelingthethermalperformanceintheactiveregionofGaN-basedelectronicdevices.

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On the role of piezoelectricity in phonon properties and thermal conductivity of GaN nanofilms

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On the role of piezoelectricity in phonon properties and thermal conductivity of GaN nanofilms

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