摘要
AsimpleandeffectiveapproachtoimprovetheswitchingcharacteristicsofAlGaN/AlN/GaNheterostructurefieldeffecttransistors(HFETs)byapplyingavoltagebiasonthesubstrateispresented.Withtheincreaseofthesubstratebias,theOFF-statedraincurrentismuchreducedandtheON-statecurrentkeepsconstant.BoththeON/OFFcurrentratioandthesubthresholdswingaredemonstratedtobegreatlyimproved.Withthethinnedsubstrate,theimprovementoftheswitchingcharacteristicswiththesubstratebiasisfoundtobeevengreater.TheaboveimprovementsoftheswitchingcharacteristicsareattributedtotheinteractionbetweenthesubstratebiasinducedelectricalfieldandthebulktrapsintheGaNbufferlayer,whichreducestheconductivityoftheGaNbufferlayer.
出版日期
2015年11月21日(中国期刊网平台首次上网日期,不代表论文的发表时间)